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Author: search.filters.author.Ueamanapong, SuradaSubject: search.filters.subject.Forward current

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    The effect of X-ray irradiation on the electrical properties of pt-doped P-N diode
    (2013-08-30)
    Janprapha, Supakorn
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Khunkhao, Sunya
    ;
    Thongnak, Thanawat
    This paper presents the effect of X-ray irradiation on the electrical properties of Pt-doped P-N diode with X-ray energy 70 keV for 205 seconds. The results show that the radiation affected both reverse and forward current characteristics of P-N diode. The forward current is increased about 3 orders after radiation, while the leakage current is increased slightly after irradiation. Moreover, build-in voltage value is also changed after irradiation. The cause of parameters changing can be analyzed from carrier lifetime and series resistance. It can be seen clearly that Xray irradiation technique are significant and can be used to improving electronic devices. © (2013) Trans Tech Publications Switzerland.
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    Improving forward current characteristics of diode by X-ray irradiation
    (2012-01-25)
    Niemcharoen, Surasak
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Poyai, Amporn
    These papers investigates the effect of X-ray on forward current characteristics of diode. The forward current of diode after X-ray irradiation energy 40 keV at the exposure time ranging 5, 10 second was increased, while 15 and 20 second was decreased. X-ray causes changing of the electrical characteristics of diode. Series resistance is the main factor for analyze on forward current characteristics. From the results, X-ray can improve performance of diode at the exposure time for 5 and 10 second. © (2012) Trans Tech Publications, Switzerland.