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Author: search.filters.author.Yamashita, KyoheiSubject: search.filters.subject.I-V characteristics

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    Temperature dependent current-voltage characteristics of n-type nanocrystalline-FeSi2/p-type Si heterojunctions fabricated by pulsed laser deposition
    (2014-01-08)
    Promros, Nathaporn
    ;
    Iwasaki, Ryuhei
    ;
    Funasaki, Suguru
    ;
    Yamashita, Kyohei
    ;
    Li, Chen
    n-Type NC-FeSi<inf>2</inf>/p-type Si heterojunctions were successfully fabricated by PLD, and their forward current-voltage characteristics were analyzed on the basis of thermionic emission theory (TE) in the temperature range from 300 down to 77 K. With a decrease in the temperature, the ideality factor was increased while the zero-bias barrier height was decreased. The calculated values of ideality factor and barrier height were 3.07 and 0.63 eV at 300 K and 10.75 and 0.23 eV at 77 K. The large value of ideality factor indicated that a tunneling process contributes to the carrier transport mechanisms in the NC-FeSi<inf>2</inf> films. The series resistance, which was estimated by Cheung's method, was strongly dependent on temperature. At 300 K, the value of series resistance was 12.44 Ω and it was dramatically enhanced to be 1.71× 10<sup>5</sup> Ω at 77 K. © (2014) Trans Tech Publications, Switzerland.