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Author: search.filters.author.Yamashita, KyoheiSubject: search.filters.subject.Photolithography

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    Characterizations of mesa structural near-infrared n-type nanocrystalline-FeSi2/p-type si heterojunction photodiodes at low temperatures
    (2013-10-04)
    Promros, Nathaporn
    ;
    Iwasaki, Ryuhei
    ;
    Funasaki, Suguru
    ;
    Yamashita, Kyohei
    ;
    Yoshitake, Tsuyoshi
    In order to reduce the parasitic capacitance, mesa structural n-type NC-FeSi<inf>2</inf>/p-type Si heterojunctions were fabricated by photolithography. Their current-voltage characteristics were measured in the dark and under illumination using a 1.31 μm laser in the temperature range of 60 - 300 K. Their junction capacitance density was evidently reduced as compared with that of the normal structural diodes. The dark current was markedly reduced with a decrease in the temperature. At 60 K, a rectifying current ratio in the dark became more than five orders of magnitude at ±1V. The ratio of the photocurrent to the dark current was dramatically enhanced to be approximately two orders of magnitude, and the detectivity was calculated to be 1.5 × 10<sup>11</sup> cmHz<sup>1/2</sup>/W at -1V. The obtained results showed a remarkable improvement in the device performance as compared with those at 300 K. © (2013) Trans Tech Publications, Switzerland.