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Enhanced antimony telluride thermoelectric generators: From material synthesis to device applications
(2025-12-01)
Theekhasuk, Nattharika
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Sakdanuphab, Rachsak
;
Voraud, Athorn
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Limsuwan, Pichet
;
Sakulkalavek, Aparporn
This study investigates the effect of Bi₄O₄SeCl₂ (BOSC) addition (0–4 wt%) on the thermoelectric performance of p-type Bi₀.₅Sb₁.₅Te₃ synthesized via high-energy ball milling. XRD analysis revealed lattice incorporation at 1 wt% BOSC, while higher concentrations led to phase separation. The 1 wt% BOSC sample exhibited a significantly reduced total thermal conductivity of 0.28 W/m·K, compared to 0.46 W/m·K in the undoped sample, attributed to enhanced phonon scattering. Despite moderate decreases in electrical conductivity and Seebeck coefficient, a peak ZT of 1.02 at 50 °C was achieved—representing a ∼54 % improvement over the undoped material. Furthermore, a prototype thermoelectric module fabricated with BOSC-doped legs produced a power density of 17.6 mW/cm² under a 150 °C temperature gradient. These results demonstrate that BOSC is an effective additive for reducing thermal conductivity and enhancing overall thermoelectric performance, offering potential for energy harvesting applications at moderate temperatures.
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Improving the thermoelectric properties of thick Sb2Te3 film via Cu doping and annealing deposited by DC magnetron sputtering using a mosaic target
(2021-11-01)
Theekhasuk, Nattharika
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Sakdanuphab, Rachsak
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Nuthongkum, Pilaipon
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Pluengphon, Prayoonsak
;
Harnwunggmoung, Adul
Thick Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were deposited on flexible substrate by DC magnetron sputtering from a mosaic Cu–Sb<inf>2</inf>Te<inf>3</inf> target. The Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films were vacuum annealed to improve their thermoelectric properties. Density functional theory was used to clarify the internal mechanism of the Cu doped into the Sb<inf>2</inf>Te<inf>3</inf> system. The results showed that Cu substitution on a Sb site induced electronic states or impurity peaks of Sb<inf>2</inf>Te<inf>3</inf> at a valence band maximum. The carrier concentration of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films increased as the Cu-doped concentration increased. However, the crystallite size and Seebeck coefficient of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films decreased as the Cu-doped concentration increased. Post-annealing treatment improved the microstructure and thermoelectric properties of the Cu-doped Sb<inf>2</inf>Te<inf>3</inf> films. The maximum electrical conductivity and power factor values of 754.20 S/cm at 50 °C and 1.56 10−3 W/mK2 at 100 °C were obtained in the annealed film with a Cu-doped concentration of 3 at%.
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Enhancing the thermoelectric properties of sputtered Sb2Te3 thick films via post-annealing treatment
(2020-04-15)
Junlabhut, Prasopporn
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Nuthongkum, Pilaipon
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Sakulkalavek, Aparporn
;
Harnwunggmoung, Adul
;
Limsuwan, Pichet
Sb<inf>2</inf>Te<inf>3</inf> films of more than 10 μm in thickness were deposited on flexible polyimide substrates by heat treatment-assisted DC magnetron sputtering. The post-annealing parameters including the temperature (150–350 °C) and time (15–60 min) were varied to investigate the microstructure, chemical composition, porosity and thermoelectric properties of the thick films. X-ray diffraction showed that both the as-deposited and post-annealed films were polycrystalline with significant preferential growth along the (015) plane. The films showed slightly off-stoichiometric compositions after post-annealing treatment. Increasing the annealing temperature and annealing time led to an increase in crystalline size and a decrease in porosity of the thick films. This was related to grain growth, agglomeration and surface improvement. The electrical transport and thermoelectric properties including carrier concentration, carrier mobility, electrical conductivity and Seebeck coefficient were investigated using Hall effect measurements and a ZEM-3 apparatus. A maximum power factor of 1.7 mW/K2m was obtained following annealing at 350 °C for 30 min.
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Microstructure and Electrical Properties of Antimony Telluride Thin Films Deposited by RF Magnetron Sputtering on Flexible Substrate Using Different Sputtering Pressures
(2017-05-01)
Khumtong, T.
;
Sukwisute, P.
;
Sakulkalavek, A.
;
Sakdanuphab, R.
The microstructural, electrical, and thermoelectric properties of antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>) thin films have been investigated for thermoelectric applications. Sb<inf>2</inf>Te<inf>3</inf> thin films were deposited on flexible substrate (polyimide) by radiofrequency (RF) magnetron sputtering from a Sb<inf>2</inf>Te<inf>3</inf> target using different sputtering pressures in the range from 4 × 10−3 mbar to 1.2 × 10−2 mbar. The crystal structure, [Sb]:[Te] ratio, and electrical and thermoelectric properties of the films were analyzed by grazing-incidence x-ray diffraction (XRD) analysis, energy-dispersive x-ray spectroscopy (EDS), and Hall effect and Seebeck measurements, respectively. The XRD spectra of the films demonstrated polycrystalline structure with preferred orientation of (015), (110), and (1010). A high-intensity spectrum was found for the film deposited at lower sputtering pressure. EDS analysis of the films revealed the effects of the sputtering pressure on the [Sb]:[Te] atomic ratio, with nearly stoichiometric films being obtained at higher sputtering pressure. The stoichiometric Sb<inf>2</inf>Te<inf>3</inf> films showed p-type characteristics with electrical conductivity, carrier concentration, and mobility of 35.7 S cm−1, 6.38 × 1019 cm−3, and 3.67 cm2 V−1 s−1, respectively. The maximum power factor of 1.07 × 10−4 W m−1 K−2 was achieved for the film deposited at sputtering pressure of 1.0 × 10−2 mbar.

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