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    Investigation of Radiation Effect on Structural and Optical Properties of GaAs under High-Energy Electron Irradiation
    (2022-09-01)
    Phakkhawan, Authit
    ;
    Sakulkalavek, Aparporn
    ;
    Buranurak, Siritorn
    ;
    Klangtakai, Pawinee
    ;
    Pangza, Karnwalee
    A systematic investigation of the changes in structural and optical properties of a semi-insulating GaAs (001) wafer under high-energy electron irradiation is presented in this study. GaAs wafers were exposed to high-energy electron beams under different energies of 10, 15, and 20 MeV for absorbed doses ranging from 0–2.0 MGy. The study showed high-energy electron bombardments caused roughening on the surface of the irradiated GaAs samples. At the maximum delivered energy of 20 MeV electrons, the observed root mean square (RMS) roughness increased from 5.993 (0.0 MGy) to 14.944 nm (2.0 MGy). The increased RMS roughness with radiation doses was consistent with an increased hole size of incident electrons on the GaAs surface from 0.015 (0.5 MGy) to 0.066 nm (2.0 MGy) at 20 MeV electrons. Interestingly, roughness on the surface of irradiated GaAs samples affected an increase in material wettability. The study also observed the changes in bandgap energy of GaAs samples after irradiation with 10, 15, and 20 MeV electrons. The band gap energy was found in the 1.364 to 1.397 eV range, and the observed intense UV-VIS spectra were higher than in non-irradiated samples. The results revealed an increase of light absorption in irradiated GaAs samples to be higher than in original-based samples.
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    Degradation in electrical properties of Si-PIN Power diodes after treatment by electron irradiation
    (2013-12-31)
    Itthikusumarn, Wiwat
    ;
    Prabket, Jirawat
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    Attiwongsangthong, Narin
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    Titiroongruang, Wisut
    ;
    Poyai, Amporn
    Power diodes development concentrate on fast switching, high reverse voltage blocking and low power consumption. One way to improve switching property is reducing minority carrier lifetime by electron irradiation. This paper presented degradation of silicon PN junction which cause from lifetime modification by electron irradiation. Silicon PIN power diodes were irradiated electron ray at different dose, 50, 100 and 150 KGy respectively, to compare with no treatment diodes. The result show that electron irradiation can reduce lifetime extremely but saturation current which effect to reverse leakage current will increase more than two orders when diodes were irradiated. J <inf>A</inf>-W<inf>D</inf> method shows that increasing in generation current via center traps of defects from irradiation is major reason of degradation in reverse leakage current and other electrical characteristics. © 2013 IEEE.