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    Preparation of pH Sensor Based on Extended-Gate Field-Effect Transistor with Spinel ZnCo2O4 Thin Films by Electrostatic Spray Deposition
    (2023-12-01)
    Keawkusonwiwat, S.
    ;
    Tunhoo, B.
    ;
    Onlaor, K.
    ;
    Thiwawong, T.
    Electrostatic spray deposition was applied to prepare pH sensing with spinel ZnCO<inf>2</inf>O<inf>4</inf> thin films based on the measurement of extended-gate field-effect transistors (EGFET). The influence of annealing temperatures on the characteristics of the prepared films was analyzed. The structural and morphological properties of the annealed ZnCo<inf>2</inf>O<inf>4</inf> films were assessed by x-ray diffraction, x-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and contact angle measurement. The effect of the ZnCo<inf>2</inf>O<inf>4</inf> annealing temperature on the characteristics of pH sensing for the prepared ZnCo<inf>2</inf>O<inf>4</inf> films in EGFET measurement were examined with pH buffer solutions in a pH range of 2–12 at room temperature. The sensing films annealed at 550°C demonstrated a high voltage and current sensitivity at 67.6 mV/pH and 1.033 (µA)<sup>½</sup>/pH, with linearity values of 0.9968 and 0.9991, respectively. Moreover, the annealed 550°C ZnCo<inf>2</inf>O<inf>4</inf> film exhibited low hysteresis at 4.99 mV and high retention stability. The results revealed that the pH sensing of the ZnCo<inf>2</inf>O<inf>4</inf> EGFET device showed a super-Nernstian sensitivity, which indicated the influence of the surface properties of the annealed film. Therefore, the ZnCo<inf>2</inf>O<inf>4</inf> film should be considered a potential option for the pH sensing layer in EGFET applications.
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    Electrical bistable properties of ZnO nanoparticles thin film prepared by electrostatic spray deposition technique
    (2015-07-01)
    Chaithanatkun, Natpasit
    ;
    Chantarawong, Direklit
    ;
    Songkeaw, Potiyan
    ;
    Onlaor, Korakot
    ;
    Thiwawong, Thutiyaporn
    Thin films of zinc oxide nanoparticles (ZnO NPs) for bistable device was prepared by electrostatic spray deposition technique based on an indium-tin oxide/ZnO NPs/aluminum (ITO/ZnO NPs /Al) structure. The characterizations of ZnO NPs films were performed using X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM). The influence of the deposition time on properties of films was also investigated. Moreover, the effect of deposition time on the bistable properties can be performed by current-voltage (I-V) measurements. The conduction mechanism of the bistable device was analyzed by theoretical model.