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    Temperature dependent photoluminescence of ZnSe/Alq3 hybrid heterostructure
    (2008-12-01)
    Pecharapa, W.
    ;
    Potirak, P.
    ;
    Yindeesuk, W.
    II-VI inorganic/organic heterostructures consisting of ZnSe and tris(8-hydroxyquinoline) aluminum (Alq<inf>3</inf>) were prepared by electron beam evaporator. Alq<inf>3</inf> layer with 20 nm was grown between 200-nm ZnSe layers. Photoluminescence measurement was conducted at various temperatures in order to investigate the important temperature-dependent parameters of this structure. PL spectra revealed thermal population of exciton state and the change in PL quantum efficiency of the film. © 2008 Trans Tech Publications, Switzerland.
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    Growth and characterization of novel optoelectronic materials. Based on II-VI inorganic/organic heterostructures
    (2006-01-01)
    Pecharapa, Wisanu
    ;
    Keawprajak, Anusit
    ;
    Kayunkid, Nawapun
    ;
    Rahong, Sakon
    ;
    Yindeesuk, Witoon
    Novel optoelectronic materials based on II-VI inorganic/organic low-dimensional heterostructure were successfully grown by electron beam evaporator. The structures were based on ZnSe, tris(8-hydroxyquinoline) aluminum (Alq<inf>3</inf>) and N,N'-bis(3-methylphenyl)-N,N'-diphenyl-benzidine (TPD). The surface morphology of the structures was investigated by atomic force microscopy and field emission scanning electron microscope. The optical and electronic properties were examined by photoluminescence, photocurrent and electroreflectance spectroscopy. Photoluminescence spectra of the ZnSe/Alq <inf>3</inf>/ZnSe structure attributed to the change of exciton energy as a result of quantum confinement showed the formation of single quantum well structure. The luminescence color can be varied by changing the thickness of the Alq<inf>3</inf> layer. The other heterostructure of ZnSe/Alq<inf>3</inf>/TPD was grown on silicon substrate. The wavelength response of this structure shown by photocurrent signal ranged from 450 nm to 1100 nm. Electroreflectance features due to optical transition energy of the single quantum well of this structure were also observed. Under applied voltage, electroreflectance signals showed significant shift due to the quantum confined Stark effect.
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    Observation of optical transition energy in ZnSe/tris(8-hydroxyquinoline) aluminum (Alq3)/ZnSe single quantum wells by photoreflectance spectroscopy
    (2004-03-01)
    Nukeaw, J.
    ;
    Upprakhot, K.
    ;
    Rahong, S.
    ;
    Tunhoo, B.
    ;
    Yindeesuk, W.
    The optical transition energy in ZnSe/tris(8-hydroxyquinoline) aluminum (Alq3)/ZnSe single quantum wells (SQW) thin films with well thickness from 5 to 50 nm was investigated by room-temperature photoreflectance (PR) measurements. PR features due to optical transition energy were observed in the SQWs of well thicknesses. The transition energies were determined by fitting the PR spectra to the theoretical line-shape expression. The transition energy decreased with increasing well thickness. © 2003 Elsevier B.V. All rights reserved.