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Subject: search.filters.subject.Bismuth telluride

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    Enhancement of thermoelectric performance and mechanical reliability in electrodeposited chitosan nanofiber-bismuth telluride nanocomposite
    (2026-07-01)
    Tian, Jianghan
    ;
    Gobpant, Jakrit
    ;
    Van Toan, Nguyen
    ;
    Theekhasuk, Nattharika
    ;
    Pham, Cong Kha
    Thermoelectric generators (TEGs) offer a promising route for converting waste heat into electrical energy; however, the practical implementation of high-performance micro-TEGs (μTEGs) is limited by the material performance and mechanical fragility of thick bismuth telluride (Bi<inf>2</inf>Te<inf>3</inf>) films. Although thick thermoelectric layers are required to sustain sufficient temperature gradients, conventional fabrication often induces residual stress, leading to cracking and structural failure. In this work, we introduce a sustainable synthesis strategy by incorporating bio-derived chitosan nanofibers (ChNFs) into the electrodeposition process. The amino and hydroxyl functional groups of ChNFs promote interfacial bonding and nucleation, enabling the rapid growth of dense, crack-free composite films with thicknesses up to 1000 μm. The introduction of ChNFs also creates abundant phonon-scattering interfaces, significantly reducing lattice thermal conductivity from 1.48 to 0.29 W m<sup>−1</sup> K<sup>−1</sup> and resulting in a 303% increase in the room-temperature figure of merit (ZT), from 0.12 to 0.50. At an optimal loading of 0.0123 wt%, the composite films exhibit a 15% increase in hardness while maintaining structural integrity. These results demonstrate a multifunctional materials design strategy that simultaneously enhances thermoelectric performance, mechanical robustness, and fabrication scalability. The ChNF–Bi<inf>2</inf>Te<inf>3</inf> nanocomposites provide a viable green pathway for developing reliable thick films for next-generation self-powered electronics and compact waste-heat harvesting systems.
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    Effect of annealing temperature on thermoelectric properties of bismuth telluride thick film deposited by DC magnetron sputtering
    (2020-07-15)
    Kianwimol, Supasak
    ;
    Sakdanuphab, Rachsak
    ;
    Chanlek, Narong
    ;
    Harnwunggmoung, Adul
    ;
    Sakulkalavek, Aparporn
    We report the thermoelectric properties of thick bismuth-telluride (Bi<inf>2</inf>Te<inf>3</inf>) films deposited on polyimide substrates by DC magnetron sputtering and annealed at various temperatures (150–350 °C). The influence of annealing temperature on the microstructure and electronic structure of thick Bi<inf>2</inf>Te<inf>3</inf> films is discussed. In this work, the annealed film at 250 °C has the best thermoelectric property due to highest electrical conductivity and Seebeck coefficient. The main effect of annealing temperature was really helpful to improve crystalline structure and enhance carrier mobility, whereas the carrier concentration was reduced due to the volatile of tellurium atom during annealing. Chemical states of bound and unbound atoms (Bi, Bi<sup>3+</sup>, Te, and Te<sup>2‐</sup>) on the surface play an important role in electrical properties. The exceed temperature caused the micro-crack formation and affect carrier transport by the scattering. The power factor of Bi<inf>2</inf>Te<inf>3</inf> deposited by DC magnetron sputtering and annealed at 250 °C is comparable to the power factors of thick Bi<inf>2</inf>Te<inf>3</inf> film deposited by various deposition techniques. The output power of single-leg, thick, thermoelectric Bi<inf>2</inf>Te<inf>3</inf> film annealed at 250 °C as a function temperature generated a power of 0.98 μW at a temperature difference of 50 °C.
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    Structural, optical and electrochemical performances of undoped and Sn2+-doped Bi2Te3 nanoparticles on WO3 electrodes
    (2020-01-01)
    Buddeesao, Mirantee
    ;
    Raknual, Duanghatai
    ;
    Tubtimtae, Auttasit
    ;
    Vailikhit, Veeramol
    ;
    Teesetsopon, Pichanan
    A facile synthesis approach was used to prepare Sn<sup>2+</sup>-doped Bi<inf>2</inf>Te<inf>3</inf> nanospheres on a WO<inf>3</inf> electrode, and the pseudo-capacitive property was measured for samples prepared with optimum parameters. SEM micrographs revealed that after the Sn<sup>2+</sup> doping, the morphology of Bi<inf>2</inf>Te<inf>3</inf> changed from aggregated or network-like nanoparticles to smaller nanospheres with a homogeneous distribution. The X-ray diffraction pattern showed rhombohedral Bi<inf>2</inf>Te<inf>3</inf> coated on the WO<inf>3</inf> electrode. Due to the more abundant electro-active sites and charge carriers that diffused through the electrolyte to the working electrode, the Sn<sup>2+</sup>-doped Bi<inf>2</inf>Te<inf>3</inf> electrode displayed the highest specific capacity of 41.4 mAh/g at a scan rate 10 mV/s, a power density of 0.63 kW/kg, an energy density of 24.5 Wh/kg, and an LSV breakdown potential of 0.26 V. These materials may be applied in potential pseudo-capacitors and in further energy storage devices.