KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/123456789/1

Browse

Settings

Subject: search.filters.subject.Gamma Irradiated

Search Results

Now showing 1 - 2 of 2
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    The effects of gamma irradiation on threshold voltage and channel mobility models of PMOS
    (2018-07-02)
    Kerdpradist, Amonrat
    ;
    Titiroongruang, Wisut
    ;
    Atiwongsangthong, Narin
    ;
    Muanghlua, Rangson
    ;
    Ruangphanit, Anucha
    This paper presents the effects of gamma irradiation on threshold voltage and mobility models of PMOS. The devices with a gate oxide thickness of 15 nm fabricated in an 0.8-micron CMOS technology were measured and tested. The electrical properties were collected pre-irradiation and after the exposure by a<sup>60</sup>Co gamma-ray source in the dose range of 1 to 10 kGy, transient dose = 290.68 Gy/hr. The results show that the threshold voltage of big MOS at zero substrate bias (VT0) increased approximately 28%, but the low field surface mobility (UO) and the maximum transconductance parameter (K0) decreased in the same value by 7.5% and the THETA (? ) parameter decreased by 28%. All parameters caused the saturation drain current of big MOS to decrease 16%. For short channel effects, the saturation drain current decreased more. Finally, the short channel model parameter should be investigated and discussed in future.
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    The Effect of Gamma Irradiation on Threshold Voltage and Channel Mobility Degradation of NMOS
    (2018-07-02)
    Kerdpradist, Amonrat
    ;
    Ruangphanit, Anucha
    ;
    Titiroongruang, Wisut
    ;
    Muanghlua, Rangson
    This paper presents the effect of Gamma Irradiated on threshold voltage, surface mobility and transconductance on N-channel MOSFET devices at a gate oxide thickness of 15 nanometers, which is fabricated at Thai Microelectronics Center by 0.8-micron CMOS technology. Then gamma irradiation (Co-60) at a total dose varied from 1 to 10 \mathbf{kGy}. By performing five rounds to observe changes in threshold voltage when the devices were exposed to gamma rays for measurement to extraction threshold Voltage (V<inf>TH</inf>) into the surface mobility (Uo) from I<inf>DS</inf>Vs V<inf>Gs</inf> curves in the saturation region. As a result, the threshold Voltage reduces at highest dose by approximately 38% compared with conventional N-channel MOSFET, for a parameter extraction in the level 3 model for MOSFET SPICE parameters is presented.