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Item type:Publication, An IR-UWB transmitter using pulse injection(2019-01-01) ;Channarong, NontapatLeelavattananon, KritsaponThis work presents a new pulse-shaping technique for an impulse-radio ultra-wideband (IR-UWB) transmitter which is intended for RFID tags and wireless sensor applications. The proposed pulse is derived from a rectangular pulse with its side-band energy suppressed in order to satisfy the FCC UWB regulation, in particular at low frequency band (3.1-4.8 GHz). To verify its effectiveness, the new pulse generator was designed in a 180-µm CMOS process. The simulation results indicate that the spectrum of the transmitted pulse can be fitted within the FCC UWB spectral mask. The total circuit consumes 926 µW at a 10 MHz pulse repetitive frequency (PRF). - Some of the metrics are blocked by yourconsent settings
Item type:Publication, A 1-V, 6-nW programmable 4th-order bandpass filter for biomedical applications(2016-10-01) ;Sundarasaradula, YuwadeeThanachayanont, ApinuntThis paper describes the design and realization of a programmable 4th-order, G<inf>m</inf>-C bandpass filter for biomedical applications. The core 2nd-order filter stage is realized by a simple gyrator-C active inductor structure with a single MOSFET as the transconductor element. The capacitive input attenuation technique is used to enhance the linearity of the filter. The proposed filter was designed and simulated with a 1-V power supply voltage with process parameters from a standard 0.18 µm CMOS technology. Post-layout simulation shows that the center frequency of the filter is adjustable from 80 Hz to 6.18 kHz by using a programmable bias current generator. At a nominal center frequency of 945 Hz and the quality factor of 3, the filter exhibits a dynamic range of 57.6 dB and an input-referred noise of 174.2 µV. The filter consumes only 6 nW from a 1-V single power supply voltage and the active area of the overall circuit is 0.088 mm<sup>2</sup>. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, A low-power CMOS RF power detector(2012-12-01) ;Sakphrom, SirapornThanachayanont, ApinuntThis paper describes the design and implementation of a low-power wide dynamic range radio-frequency (RF) power detector in a standard 0.18-μm CMOS process. The proposed circuit includes a root-mean-square (RMS) power detector and a logarithmic amplifier. The RMS power detector exploits the nonlinear characteristic of MOSFET to realize the RMS conversion. A current-mirror active load is used in the RMS power detector to increase the RMS conversion gain. Since the output of the RMS power detector is a DC voltage, the following logarithmic amplifier does not require wide operating bandwidth, thus allowing simple circuit realization with minimum power dissipation. Simple differential amplifier is used to realize the limiting gain stage. Post-layout simulation results showed that the proposed circuit was able to detect input power from -70 dBm to -20 dBm with signal frequencies ranging from 0.5 GHz to 5 GHz, while dissipating only 0.9 mW under a 1.8-V power supply voltage. © 2012 IEEE.
