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Subject: search.filters.subject.Substrate temperature

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    Investigation of morphological surface features, wetting behavior and mechanical traits under various substrate temperatures for beta iron disilicide prepared via facing-targets sputtering
    (2022-08-01)
    Charoenyuenyao, Peerasil
    ;
    Chaleawpong, Rawiwan
    ;
    Borwornpornmetee, Nattakorn
    ;
    Paosawatyanyong, Boonchoat
    ;
    Sittimart, Phongsaphak
    Using facing-targets sputtering, semiconducting iron disilicide (β-FeSi<inf>2</inf>) film layers were sputtered and coated on Si wafers owning (111) orientation. Under experimental conditions, the heating temperatures of the substrate (T<inf>substrate</inf>) were varied at 525 °C, 550 °C, 600 °C and 660 °C. The acquired XRD patterns indicated a strong β(202/220) peak of around 29.1° for the β-FeSi<inf>2</inf> films prepared at a T<inf>substrate</inf> of at least 600 °C. The β-FeSi<inf>2</inf> film surface prepared at a T<inf>substrate</inf> of 525 °C comprised several crystallites, which were arranged to form a grain format at a higher T<inf>substrate</inf>. The root mean square roughness for the film surface prepared at a T<inf>substrate</inf> of 525 °C was 0.49 nm, where it increased to 0.98 nm, 2.39 nm, and 4.23 nm at T<inf>substrate</inf> of 550 °C, 600 °C, and 660 °C, respectively. The films prepared at a T<inf>substrate</inf> of 525 °C exhibited an average contact angle (θ<inf>CA</inf>) of 91.15°, and improved to 103.80° after employing a T<inf>substrate</inf> of 660 °C. These results hinted at the possibility of employing the β-FeSi<inf>2</inf> films prepared at all T<inf>substrate</inf> in the hydrophobic surface application. The estimated hardness and elastic modulus of the β-FeSi<inf>2</inf> films prepared at T<inf>substrate</inf> of 525 °C were 12.78 GPa and 190.98 GPa, respectively, which increased to 21.27 GPa and 248.67 GPa, respectively, for the films prepared at 660 °C. According to mechanical results, the β-FeSi<inf>2</inf> films prepared at 660 °C exhibited the potential to be developed for use in hard coating application.
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    Influence of substrate temperature on some properties of close-spacing thermally evaporated CdTe thin films
    (2008-01-01)
    Gaewdang, T.
    ;
    Wongcharoen, Ng
    ;
    Siribuddhaiwon, P.
    ;
    Promros, N.
    CdTe thin films with different substrate temperatures have been deposited by thermal evaporation method on glass substrate in vacuum chamber having low pressure about 3.0×10<sup>-5</sup> mbar. According to XRD analysis, CdTe thin films are polycrystalline belonging to cubic structure with preferential orientation of (111) plane. The strongest peak intensity of XRD is observed in the film prepared with substrate temperature of 150°C. Band gap and band tail values of the as-deposited films were evaluated from the optical transmission spectra. The lowest dark sheet resistance value was obtained from the film prepared with substrate temperature of 150°C as well. Regarding to our experimental results, it may be indicated that the 150°C substrate temperature is the most suitable condition in preparing CdTe thin films for solar cell applications. © 2008 Trans Tech Publications, Switzerland.