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A planar nanoporous silicon metal-semiconductor-metal visible light photodetector
(2013-11-01)
Atiwongsangthong, Narin
In this work, the nanoporous silicon layer is prepared through the simple electrochemical etching of p-type crystalline silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The gravimetric method and SEM images have been used to characterize the morphological on the various porosity of nanoporous silicon layer. Two square Al Schottky contacts were thermally deposited on the nanoporous silicon layer with the electrode spacing is 500 μm to form a planar nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector. In experiment, we investigated photoresponse and the response time of a planar nanoporous silicon MSM visible light photodetector which was fabricated on the various porosity of a nanoporous silicon layer. It is found that when devices are fabricated on a higher porosity nanoporous silicon layer, the photoresponse of the device will expand toward the shorter-wavelengths and the bandwidth of the spectrum response will cover visible light. In addition, it is found that the response time of the device decreases. © 2013 American Scientific Publishers All rights reserved.
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Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for Organic Vapor Sensor
(2012-08-01)
Atiwongsangthong, Narin
The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future. Copyright © 2012 American Scientific Publishers.
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Application of nanoporous silicon for a metal-semiconductor-metal visible light photodetector
(2011-01-01)
Atiwongsangthong, Narin
;
Niemcharoen, Surasak
;
Titiroongruang, Wisut
In this paper we present a study on the application of nanoporous silicon to an optoelectronic device called a nanoporous silicon metal-semiconductor- metal (MSM) visible light photodetector. This device was fabricated on a nanoporous silicon layer which was formed by electrochemical etching of a silicon wafer in a hydrofluoric acid solution under various anodization conditions such as the resistivity of the silicon wafer, current density, concentration of the hydrofluoric acid solution and anodization time. The structure of this device has two square Al/nanoporous silicon Schottkybarrier junctions on the silicon substrate and the electrode spacing is 500 μm. The experiment will study photoresponse and the response time of a nanoporous silicon MSM photodetector which was fabricated on the various porosity of a nanoporous silicon layer. It is found that when devices are fabricated on a higher porosity nanoporous silicon layer, the photoresponse of the device will expand toward the short-wavelength and the bandwidth of the spectrum response will cover visible light. In addition, it is found that the response time of the device decreases. Copyright © 2011 American Scientific Publishers All rights reserved.
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Nanoporous silicon metal-semiconductor-metal visible light photodetector
(2010-01-01)
Atiwongsangthong, Narin
In this research, we present the study on the application of nanoporous silicon for optoelectronic device which called nanoporous silicon metal-semiconductor-metal (MSM) visible light photodetector in this paper. This device was fabricated on nanoporous silicon layer which was formed by electrochemical etching of silicon wafer in hydrofluoric acid solution under various anodization condition such as the resistivity of silicon wafer, current density, concentration of hydrofluoric acid solution and anodization time. The structure of this device has two square Al/nanoporous silicon Schottky-barrier junctions on the silicon substrate and the electrode spacing is 500 μm. The experiment will study on photoresponse and responsetime of nanoporous silicon MSM photodetector which was fabricated on various porosity of nanoporous silicon layer. It is found that when devices fabricated on higher porosity nanoporous silicon layer, the photoresponse of device will expand toward the short-wavelength and bandwidth of spectum response will cover visible light. In addition, it is found that responsetime of device decreases. ©ICROS.

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