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Item type:Item, Enhanced performance of hybrid piezo/triboelectric using BaTiO3/polymer composite film modified with rGO(2024-01-01) ;Panpho, Phakakorn ;Phetphong, Pornphiphat ;Charoonsuk, Thitirat ;Vittayakorn, NarathipSriwong, ChavalHybrid piezo/triboelectric technology is an emerging energy source that can continuously power small electronic devices by harvesting ambient mechanical energy and converting it into electricity. In this work, a high-performance hybrid piezo/triboelectric device was presented. The composite film was synthesized that co-doped BaTiO<inf>3</inf> powders (BT) and reduced graphene oxide (rGO) embedded within a host material made of polydimethylsiloxane (PDMS). The hybrid device is made by mixing BT powders into the PDMS to form a series of composite films, ranging from 10% to 45% by wt.%. Additionally, 1–5 wt.% of rGO was loaded into fabricates 40BT/PDMS. The results show that the addition of rGO can improve the uniform dispersion of BT powder in the PDMS matrix. The 4 wt.% of rGO for 40BT/PDMS exhibited the optimal energy harvesting performance among all compositions, achieving notable output voltage and current. This work demonstrates a facile, low-cost approach for obtaining high-performance hybrid piezo/triboelectric by utilizing a composite film BaTiO<inf>3</inf> and polymer (PDMS) modified with rGO. - Some of the metrics are blocked by yourconsent settings
Item type:Item, CaTiO3 induced ferroelectric phase coexistence and low temperature dielectric relaxation in BaTiO3–BaZrO3 ceramics(2018-05-01) ;Sutapun, Manoon ;Charoonsuk, Thitirat ;Kolodiazhnyi, TarasVittayakorn, NaratipThe series of 0.86BaTiO<inf>3</inf>–(0.14−x)BaZrO<inf>3</inf>–xCaTiO<inf>3</inf> (abbreviated as BT–BZ–xCT) ceramics with 0.03 ≤ x ≤ 0.11 were studied to obtain high piezoelectric properties. Rietveld refinement analysis indicated that the BT–BZ–CT compositions follow a gradual rhombohedral (R) → orthorhombic (O) + R → O + tetragonal (T) → T phase transformation with increasing x. Clear evidence of the series of ferroelectric phase transitions was also found in the dielectric results. The R-O and O-T transition temperature shifted close to ambient temperature, while the Curie temperature slightly increased with increasing x. In addition to the dielectric loss peaks associated with the structural phase transitions, a broad low-temperature dielectric loss peak was detected in the R phase at T = 90-150 K. This dielectric relaxation was attributed to the domain wall freezing and fits well to the Vogel-Fulcher model with activation energy E<inf>a</inf> ≈ 60-300 meV and freezing temperature T<inf>VF</inf> ≈ 75-140 K. High piezoelectric strain coefficient (d<inf>33</inf>*) of about 1030 pm/V at 10 kV was achieved at x = 0.07, and a high Curie temperature (T<inf>C</inf>) was maintained at about 375 K.
