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Author: search.filters.author.Jeamsaksiri, WutthinanSubject: search.filters.subject.Lorentz force

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    The magnetotransistor for 2-axis magnetic field measurement in CMOS technology
    (2015-08-17)
    Leepattarapongpan, Chana
    ;
    Phetchakul, Toempong
    ;
    Pengpad, Puttapon
    ;
    Srihapat, Arckom
    ;
    Jeamsaksiri, Wutthinan
    This paper presents a magnetotransistor for detecting magnetic field in vertical and lateral directions (B<inf>Y</inf> and B<inf>Z</inf>) by relying on the difference between base and collector currents (ΔI<inf>CB</inf>). It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. The experiment showed that, at 10 mA of biasing current, the B<inf>Y</inf> and B<inf>Z</inf> direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.7 and 1.35 %/T, respectively. The sensitivity at emitter current 20mA are 0.55 and 0.7 %/T for vertical and lateral magnetic field directions, respectively. This research on the magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications.
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    The increase sensitivity of PNP-magnetotransistor in CMOS technology
    (2015-02-02)
    Leepattarapongpan, Chana
    ;
    Phetchakul, Toempong
    ;
    Pengpad, Puttapon
    ;
    Srihapat, Arckom
    ;
    Jeamsaksiri, Wutthinan
    This paper presents improve sensitivity of pnp-magnetotransistor for detect vertical magnetic field response. The device structure consisted of one emitter, four collectors and four bases. The four collectors are separate to form four terminals. The same is true for the four bases. The experiment showed that, at 2 and 4mA of biasing current, magnetic field in B<inf>Z</inf> direction sensitivity within the range of 0-400 mT are 0.045 and 0.09 mV/mT in single mode. The sensitivity of merge mode are 0.15 and 0.3 mV/mT. The magnetic field response of merge mode shows 4-time increase of the magnetic field sensitivity comparative to single mode.
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    A merged magnetotransistor for 3-axis magnetic field measurement based on carrier recombination-deflection effect
    (2014-01-01)
    Leepattarapongpan, Chana
    ;
    Phetchakul, Toempong
    ;
    Penpondee, Naritchaphan
    ;
    Pengpad, Puttapon
    ;
    Srihapat, Arckom
    This article presents a novel magnetotransistor based on carrier recombination-deflection effect for detecting magnetic field in three dimensions (B<inf>X</inf>, B<inf>Y</inf>, and B<inf>Z</inf>) by relying on the difference between base and collector currents (I<inf>CB</inf>). This device used low biasing current. It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. All four collector terminals were connected with each other. The same was true for the four base terminals. LOCOS oxide was grown to surround the emitter area to limit lateral carrier loss, and therefore reducing the overall biasing current. The experiment showed that, at 0.2 mA of biasing current, the B <inf>X</inf>, B<inf>Y</inf> and B<inf>-Z</inf> direction sensitivity to magnetic field within the range of 0-400 mT are 2, 5 and 14.5%/T, respectively. This research on the merged magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications. © 2014 Elsevier Ltd.