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Author: search.filters.author.Kasemsuwan, VarakornSubject: search.filters.subject.bulk-driven

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    Low-voltage bulk-driven QFG-regulated self-cascode super MOS transistor
    (2016-09-06)
    Thongleam, Thawatchai
    ;
    Suadet, Apirak
    ;
    Kasemsuwan, Varakorn
    A bulk-driven super MOS transistor (BD-SMT) for low voltage operation is presented. The proposed transistor achieves a high effective transconductance (G<inf>m(eff)</inf>), high effective drain impedance (R<inf>D(eff)</inf>) and low effective source impedance (R<inf>S(eff)</inf>). BD-SMT is designed based on regulated self-cascode and negative feedback techniques. The transistor been designed using a 0.18 μm CMOS technology and operated from a 0.4 V supply with a static power consumption of 12 μW. The simulation results showed higher G<inf>m(eff)</inf>, larger R<inf>D(eff)</inf> and smaller R<inf>S(eff)</inf> as compared to those of simple bulk-driven MOS transistor.
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    A compact class-AB bulk-driven quasi-floating gate current mirror for low voltage applications
    (2013-12-31)
    Suadet, Apirak
    ;
    Kasemsuwan, Varakorn
    A compact class-AB bulk-driven quasi-floating gate current mirror is proposed. The circuit is based on an active class-A current mirror using bulk-driven quasi-floating gate (BD-QFG) MOS transistors and low voltage bulk-input pseudo-differential amplifier. The circuit can operate from a supply voltage as low as V<inf>T</inf>+V<inf>DSAT</inf>. The performance of the circuit is verified by SPECTRE, using a standard 0.18 μm CMOS process with a 0.5 V supply voltage. The circuit demonstrates low input impedance (934 Ω) and relatively high output impedance (1.13 MΩ). The circuit can drive the output current 8 times larger than the quiescent current. The power dissipation under quiescent condition is 8.2 μW. © 2013 IEEE.
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    A 0.6 volt class-AB CMOS voltage follower with bulk-driven quasi-floating gate super source follower
    (2012-10-02)
    Wangtaphan, Skawrat
    ;
    Kasemsuwan, Varakorn
    This paper presents a design of 0.6 V class-AB voltage follower (VF) using 0.13 μm CMOS technology. The follower is developed based on the super source follower (SSF) using bulk-driven and quasi-floating gate (QFG) techniques. The proposed VF can operate at low voltage without DC level shift between the input and output terminals. The simulation results show the total harmonic of 0.3 % for an input/output voltage of 0.18 V <inf>pp</inf> at 100 kHz (R <inf>L</inf>//C <inf>L</inf>=5 kΩ//100 pF). The power dissipation is found to be 38 μW. © 2012 IEEE.