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Author: search.filters.author.Luanatikomkul, Wittaya

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    The Design of Metal-Semiconductor-Metal Structure Magnetic Sensor
    (2016-01-01)
    Sutthinet, Chalin
    ;
    Phetchakul, Toempong
    ;
    Luanatikomkul, Wittaya
    ;
    Poyai, Amporn
    This paper presents the MSM structure magnetic detector device that normally detects the electromagnetic wave. The device is special design for magnetic field detector and still detects the electromagnetic wave as normal function. The schottky diode with the split contacts structure allows us to reach this target. The device operates with the saturation current and the magnetic response is the current difference between two contacts which is injected from one metal and deflected in semiconductor toward to another metal. From the simulation result by Sentaurus TCAD, the relative sensitivity is 14.19 mT<sup>-1</sup> at the current 0.3 μA. This device is the first MSM multi-sensor for magnetic and electromagnetic wave detector.
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    Multi-sensor diode for magnetic field and photo detection
    (2015-07-01)
    Sutthinet, Chalin
    ;
    Phetchakul, Toempong
    ;
    Luanatikomkul, Wittaya
    ;
    Poyai, Amporn
    This research presents the multi-sensor that can detect both magnetic field and photo in the one device. The structure is based on p-n junction diode that is the fundamental of light detecting. The idea is how to design p-n junction for magnetic field. The dual magneto diode structure is a solution. It is designed to be suitable for these purposes. The device is specially designed and simulation by Sentaurus TCAD. It is fabricated by standard CMOS process and measured the responses of magnetic field and light. It shows a good device that detects two types of energy equally well. The relative sensitivity of magnetic response is 57 mT<sup>-1</sup> at forward bias 1 mA and 128 mT<sup>-1</sup> at reverse 8 nA. The dark current of device is 7.34 mA at standard test condition (25°C, AM 1.5, 100 W/m2). It is current mode device generating photo current and cathode current difference that is linearly induced from magnetic field.
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    The study of p-n and schottky junction for magnetodiode
    (2012-01-01)
    Phetchakul, Toempong
    ;
    Luanatikomkul, Wittaya
    ;
    Leepattarapongpan, Chana
    ;
    Chaowicharat, Ekalak
    ;
    Pengpad, Putapon
    This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.