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Magnetic GAA (MAG-GAA) for Vertical and Horizontal Magnetic Field Detection
(2024-01-01)
Swe, Khine Thandar Nyunt
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Poyai, Amporn
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Phetchakul, Toempong
The Gate All Around (GAA) is introduced as a magnetic sensor to sense the vertical and horizontal magnetic field applied to the device. Magnetic GAA (MAG-GAA) consisting of one source contact, one gate contact wrapped around the channel, and four drain contacts are created and simulated for the two-dimensional magnetic field detection using Sentaurus. The proposed device structure of MAG-GAA is designed and operated based on the current mode of the Hall effect. The vertical magnetic field is sensed by activating the drain contacts D<inf>1</inf> and D<inf>2</inf>. To detect the horizontal magnetic field, the drain contacts D<inf>3</inf> and D<inf>4</inf> positioned at the top and bottom surfaces of the device are enabled. The differential drain current is obtained as the magnetic response in both detections. MAG-GAA in which the channel length and width are 10 nm and 5 nm respectively is simulated by applying the magnetic field 0.1 T, 0.2 T, 0.3 T, 0.4 T, and 0.5 T in +z, -z, +y, and -y directions. Their respective magnetic responses are illustrated, and the Hall current reaches the highest value at the magnitude of the magnetic field 0.5 T in both cases of magnetic field detection. The sensitivity of MAG-GAA for vertical magnetic field detection is better than its sensitivity for the horizontal magnetic field.
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Study of Sensitivity and Noise on Magnetic FinFET (MAG-FinFET)
(2023-01-01)
Swe, Khine Thandar Nyunt
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Poyai, Amporn
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Phetchakul, Toempong
Three dimensional FinFET device structure is proposed as magnetic device to detect the vertical magnetic field. The region of drain contact is split into two drain contacts and the MAG-FinFET has source contact, gate contact and two drain contacts. Lorentz's force appears as Hall effect when the magnetic field is exposed to the device perpendicularly. The imbalanced drain currents at the drain contact D1 and D2 caused by the expose of magnetic field are measured, and the Hall current is obtained as the output of MAG-FinFET. The relative sensitivities of MAG-FinFET with three channel lengths are calculated. Mixed mode AC analysis simulations are done by using Sentaurus TCAD to study the impact of noise on MAG-FinFET. The fluctuations at the output nodes of Mag-FinFET can be seen as noise voltage spectral density and noise current spectral density. The short channel length of 10 nm MAG-FinFET gives the highest differential drain current and shows the best sensitivity. The limitation of minimum magnetic field is determined from the noise current spectral density obtained at bandwidth 1 Hz to 1 kHz. For channel length 10 nm MAG-FinFET, the minimum magnetic field Bmin 76mTHz is obtained for narrow bandwidth at frequency 1 kHz. The equivalnet magnetic field Beq obtained for large frequency range is 1.28THz.
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Comparison of Carrier Deflection between MAG-TFET and MAG-FinFET
(2023-01-01)
Boonlua, Thanet
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Poyai, Amporn
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Phetchakul, Toempong
This paper is a comparison of the carrier deflection mechanism of a new magnetic sensor structure between the tunneling Field Effect Transistor (TFET) structure and the FinFET structures so-called MAG-TFET and MAG-FinFET.The device relies on carrier deflection from magnetically induced forces. The MAG-TFET current is caused by electron tunneling and drifting through the bulk under gate while the MAG-FinFET current is caused by the drift channel carrier from the inversion layer induced by gate voltages and there is also a bulk current beneath the substrate. The carrier deflection of the device is due to the current in the induced channel and current in the bulk. From the results, carrier deflection in the induced channel is better than in the bulk. The device sensitivity depends on the proportion of these two currents.
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Magnetic TFET (MAG-TFET)
(2022-01-01)
Boonlua, Thanet
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Poyai, Amporn
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Phetchakul, Toempong
This paper presents a new structural magnetic field sensor device. The device structure uses the basic structure of tunneling field effect transistor (TFET). The mechanism uses the current-mode Hall phenomenon with tunneling electron carriers from source to drain. The device structure consists of source, gate and drain with two separate contacts on both sides D1 and D2 to accommodate the amount of current difference (ID) caused by Lorentz's force deflection. The study is carried out by using TCAD simulation. The magnetic field intensity response is linearly dependence. The sensitivity depends on the amount of current and magnetic field intensity. The sensitivity (S) obtained by this device which has width (Fw) 5 nm, length (Lg) 100 nm and height (Fh) 5 nm at biased current of 1000, 100, 10, 1 µA are 0.0133, 0.0263, 0.0812 and 1.22 µA.T-1 respectively. From this experiment, the best relative sensitivity (SR) is 0.000812 T-1 at 100 µA.
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Novel MAGFinFET: Operation, Design and Geometry Effect for Modern Sensors
(2022-01-01)
Swe, Khine Thandar Nyunt
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Pamonchom, Chanvit
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Poyai, Amporn
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Phetchakul, Toempong
This paper presents a new magnetic detection device, MAGFinFET, which is based on the advanced 3D FinFET structure. It can measure the vertical magnetic field by designing two contacts on both sides of the drain. The operation uses the principle of the current mode of Hall effect causing the deflection of the drain currents at both contacts. The 3D geometry effect was studied: channel length, fin height and fin width. It can be seen that when the values of these parameters are increased, the differential currents and relative sensitivities are increased linearly. Relative sensitivity has the highest value 0.00201 T-1 at channel length 50 nm. Fin height and fin width of 50 nm give the highest sensitivity of 0.00468 T-1 and 0.00415 T-1 respectively. Current density distributions of the different variations of each parameter Lg, Fh and Fw are observed by applying vertical magnetic field on the device. The 3D-MAGFinFET has been compared to that of the 2D non-split drain MAGFET structure and bulk fin resistor that use n-type semiconductor instead of induction channel. MAGFinFET shows quite higher sensitivity compared to bulk fin resistor. MAGFinFET mechanism models and simple characteristic equations are proposed in this work. Sentaurus TCAD is used for the device structure and simulation for the characteristics ofMAGFinFET. This FinFET based device can be fabricated with modern integrated circuit technology.
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High sensitivity non-split drain MAGFET for wireless sensor networks
(2020-08-14)
Nakachai, Rattapong
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Poyai, Amporn
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Phetchakul, Toempong
The non-split drain MAGFET proposed in this paper is aspossess an ideal, highest sensitivity in the same type of device, current mode for low power, and low voltage that can be embedded within a system for wireless sensor networks application. It is a split-drain MAGFET that is designed to have no gap between drains so that there is no loss from the gap. There are two split contacts in one drain to represent the split drains for current difference that induced from due to magnetic field. The relative sensitivity comparison among all the gaps (3, 2, 1, and 0 µm) with all aspect ratio of width (W)/length (L) (L/W = 1, 0.6, and 0.2) at biased current 0.25 mA shows that the zero gap or the non-split drain MAGFET structure gives the highest sensitivity. The sensitivities of the non-split drain at the aspect ratios L/W = 1, 0.6, and 0.2 in this study are 0.0595, 0.0479, and 0.0231 T−1, respectively. It is proved that the gap is not necessary for the MAGFET. It is a new, smart way to design the MAGFET for the highest sensitivity and gap lossless for modern sensor applications.
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A novel dual magnetodiode for wireless sensor networks
(2020-08-14)
Sutthinet, Chalin
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Poyai, Amporn
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Phetchakul, Toempong
This paper presents a new magnetodiode, the so-called dual magnetodiode, for wireless sensor application. The device is a current mode which can be integrated with a chip compatible with modern low power, low voltage integrated circuit (IC). The structure and operation are completely different from a conventional magnetodiode. The structure is composed of two p–n junctions in that one region is common and the others are split terminals for output of differential current. The underlying mechanism is carrier deflection by induced force from a magnetic field. The carriers are injected from the common region by forward bias. The defection carriers diffuse, deflect, and recombine along substrate through split terminals according to direction and density of the magnetic field linearly and symmetrically. From the comparison of complementary structure of the split cathode and the split anode structure of L<inf>D</inf> = 50 µm, the bias current 1 mA and magnetic field 0.5 T, the relative sensitivities (S<inf>R</inf>) are 11.01 and 11.19 T−1, respectively. This device is a simple p–n junction structure which is compatible with all micro/nanotechnology.
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MAGFinFET: The channel length effect
(2020-07-01)
Phetchakul, Toempong
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Pamonchom, Chanvit
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Poyai, Amporn
This paper studies the channel length effect on MAGFinFET. It is a new magnetic device which its structure is FinFET in nanometer scale. It detects vertical magnetic field like as MAGFET. The parameter is channel length of n channel FinFET which is varied at 10, 20, 30, 40 and 50 nm. The sensitivities at biased current 100 μA of varied channel length are 182.49, 186.41, 190.65, 197.22 and 201.00 nA/T, respectively. It depends linearly on the length of MAGFinFET like as MAGFET in micrometer scale. By comparing with bulk fin channel with the concentration 1015 cm-3, the sensitivity of MAGFinFET and fin resistor at biased current 100 μA are 190.65 and 153.50 nA/T, respectively. The current deflection of induced channel of FinFET is more sensitive than bulk resistor channel in same condition. The induced charges can deflect freely pass through depletion layer in thin fin channel by induced magnetic force not less than or better than in bulk resistor channel.
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Sensing layer combination of vertically aligned ZnO nanorods and graphene oxide for ultrahigh sensitivity IDE capacitive humidity sensor
(2020-06-01)
Pongampai, Satana
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Pengpad, Puttapon
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Meananeatra, Rattanawan
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Chaisriratanakul, Woraphan
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Poyai, Amporn
An interdigitated electrode (IDE) capacitive humidity sensor fabricated on a silicon substrate was used to investigate sensing materials, which proved to be an ultrahigh-sensitivity humidity sensor. A sensing layer combination (SLC) between vertically aligned ZnO nanorods and optimal graphene oxide (GO) was prepared on the device and was tested as a humidity sensor. X-ray diffractometry (XRD) exhibited crystallized wurtzite structure of ZnO nanorods and transmission electron microscope (TEM) shown perfectly indexed hexagonal wurtzite ZnO structure dots position correspondence. A scanning electron microscope (SEM) was used to analyze ZnO nanorods/GO morphologies. Furthermore, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) clearly exhibited GO presence and hydrophilic functional groups (carboxyl, epoxy, and hydroxyl), respectively. The SLC prominently demonstrated ultrahigh sensitivity (up to 196.95% or 1.97 times from commercial sensor; HS1101, Humirel) and linear responses behavior with 0.96 for coefficient of determination. The device sensitivity obviously improved as steps of 40, 50, 60, 70, 80, and 90% RH at values of 1.09, 1.41, 1.51, 1.65, 1.80, and 1.91 times, respectively. The device also exhibited fast response (25 s) and short recovery times (17 s). Its hysteresis (6.58%) manifestly improved to 1.84 times. Moreover, repeatability and long-term ability of the device demonstrated high accuracy (range ±0.37pF) and durability. © 2020 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
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Non-split drain MAGFET
(2019-07-01)
Nakachai, Rattapong
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Poyai, Amporn
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Phetchakul, Toempong
This paper presents the design of non-split drain MAGFET for high sensitivity magnetic device. The structure is split drain MAGFET that has no gap between drains so drain is only one drain that has split contacts within a drain. It is proved that MAGFET is not necessary to design by split drain with gap between them. The sensitivity is the highest for non-split drain structure. This study compares sensitivities of the two structures with gap between drains of 3, 2, 1 and 0μm at 0.25 mA, aspect ratio L/W=1, which are 0.0326, 0.0389, 0.0481 and 0.0595 T-1, respectively. The relative sensitivities (S<inf>r</inf>) of non-split drain are also highest at other aspect ratios which are 0.0003, 0.0036, 0.0092 and 0.0231 T-1 for L/W=0.2 and 0.0182, 0.0264, 0.0338 and 0.0479 T-1 for L/W=0.6, respectively. The non-split drain MAGFET is a new design for highest sensitivity. The non-split drain design is the smart way for high sensitivity MAGFET.

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