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Author: search.filters.author.Sangwaranatee, NarongSubject: search.filters.subject.I-V characteristics

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    Effect of rta on electrical characteristics of pt-doped p-n junction diode
    (2017-02-01)
    Chaiyasoonthorn, Sawatsakorn
    ;
    Srithanachai, Itsara
    ;
    Sangwaranatee, Narong
    This paper investigates the effect of rapid thermal annealing (RTA) between 850 and 900°C. Platinum (Pt) atom will drive-into silicon structure by using RTA process and the influence of temperature. Therefore, we study the effects of temperature in RTA process to I-V characteristics of device are 850 and 900°C at 15 mins. After annealing process, the built-in voltage (Vbi ) is around 0.3-0.4eV, which means that Pt does not affect the device junction. The I-V characteristics after annealing show that at 900°C there is the worst leakage of current with slightly better than the forward current. In case of leakage current, it may occur from the Pt atom damage creation or trapping center in silicon structure.
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    Power device impact using pt-doped on i-v characteristics
    (2016-06-01)
    Sangwaranatee, Narong
    ;
    Srithanachai, Itsara
    ;
    Yupapin, Preecha P.
    We investigate the influence of Pt-doped in the power device, where the power device has been fabricated by using CMOS technology. Pt has high diffusion coefficient in the semiconductor material and Pt atom that can be used to reduce the device switching time. On the other hand, it may induce defects in device mechanism. The results obtained show that the Pt can penetrate into the silicon structure of 3,700A (before RTA process) by using the ion implantation 120keV. The Pt-doped device has shown the higher forward current of order 1. The goal of this experiment is to investigate the effect of Pt-doping on electrical characteristics of the power device.