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Author: search.filters.author.Srithanachai, ItsaraSubject: search.filters.subject.Electronics

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    Capacitance-voltage (c-v) characteristic effect of pt atom power device
    (2016-06-01)
    Sangwaranatee, Narong
    ;
    Srithanachai, Itsara
    ;
    Yupapin, Preecha P.
    As Pt atoms may create problem into the surface and junction of the power device, the paper investigates the effect of Pt atoms in thermal annealing (TA) process for various temperature environments. Though experiments, the comparison between un-doped and Pt-doped results for 850 °C and 900 °C has been made. As per results obtained Pt atoms can be deeply diffused to the silicon bulk after the TA 2 process. While before this process, the Pt diffusion range was recorded to be 4,500A. It was found that there was no significant change in C-V characteristics of Pt-doped, when the Vbi of 0.4-0.5eV got achieved. Thus, the Pt atoms contact type is not changed and the carrier concentration is confirmed due to effect that Pt may induce trap or cluster that can reduce the power device carrier concentration.
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    Power device impact using pt-doped on i-v characteristics
    (2016-06-01)
    Sangwaranatee, Narong
    ;
    Srithanachai, Itsara
    ;
    Yupapin, Preecha P.
    We investigate the influence of Pt-doped in the power device, where the power device has been fabricated by using CMOS technology. Pt has high diffusion coefficient in the semiconductor material and Pt atom that can be used to reduce the device switching time. On the other hand, it may induce defects in device mechanism. The results obtained show that the Pt can penetrate into the silicon structure of 3,700A (before RTA process) by using the ion implantation 120keV. The Pt-doped device has shown the higher forward current of order 1. The goal of this experiment is to investigate the effect of Pt-doping on electrical characteristics of the power device.