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Carrier lifetime of platinum doped P-N diode after irradiation by soft X-ray
(2013-08-30)
Nararug, Budsara
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Srithanachai, Itsara
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Ueamanapong, Surada
;
Khunkhao, Sanya
;
Janprapha, Supakorn
This paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τ<inf>g</inf>) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed. © (2013) Trans Tech Publications Switzerland.
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Defects study by activation energy profile for lowering leakage current in p-n junction
(2011-01-01)
Srithanachai, Itsara
;
Ueamanapong, Surada
;
Rujanapich, Poopol
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Atiwongsangthong, Narin
;
Niemcharoen, Surasak
Diode leakage current consists of diffusion (I<inf>d</inf>) and generation current (I<inf>g</inf>), which is strongly sensitive to the residual defect density. These defects can be studied by activation energy (E<inf>a</inf>). Therefore, this paper presents a method for calculating activation energy of silicon p-n junctions from volume generation current. It combines temperature-dependent current-voltage (I -V) and capacitance- voltage (C-V) measurements of diodes. The I<inf>g</inf> can be found from the volume leakage current by subtraction of the volume diffusion current, which is calculated while the depletion width is zero. The activation energy (E<inf>a</inf>) is derived from slope of an Arrhenius plot of I<inf>g</inf>. To derive the correct slope the temperature dependence of the depletion width, which is obtained from the corrected volume capacitance has been applied. The E<inf>a</inf> profile below junction has been shown. The lower E<inf>a</inf> value has been found near the junction, which may relate to the junction implantation. © (2011) Trans Tech Publications.
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Generation lifetime analysis of p-n junction x-ray detector
(2010-07-30)
Rujanapich, Poopol
;
Poyai, Amporn
;
Srithanachai, Itsara
;
Pengpad, Putapon
;
Hruanan, Charndet
Operation lifetime of the X-ray detector is the major factor that defines cost of detector or the actual operation cost of the detector. The purpose of this paper is to study the possibility of operation lifetime extension of the silicon x-ray detector. The study of the device's carrier generation lifetime before and after device exposed to the X-ray for 4 and 150 second at 40, 55 as well as 70 keV were conducted in this paper. The 1 mm<sup>2</sup> p-n junctions were fabricated by boron implantation process into phosphorus doped silicon wafer. A commercial x-ray source for dentist was used to generate x-ray in these experiments. The carrier generation lifetime was calculated from current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The results show that the carrier generation lifetime increased after 4 second of x-ray irradiation at all three energy conditions but decreased back close to the original value after continue exposed devices for another 150 second. However, the lowest point of the generation lifetime after 4 second of x-ray irradiation is depending on the level of energy used. The results also presented that the defects that caused by x-ray irradiation are manageable.

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