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Author: search.filters.author.Srithanachai, ItsaraSubject: search.filters.subject.Roentgen radiation

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    Roentgen radiation response in P-N semiconductor device
    (2022-01-01)
    Torasa, Chonmapat
    ;
    Srithanachai, Itsara
    Radiation is an important for investigate semiconductor device process improvement area. Currently, radiation use for many areas in semiconductor device and one of application use semiconductor device for detector. However, radiation is one of part of cure process in semiconductor area although radiation has high energy and may impact to semiconductor device performance. The experiment of radiation exposed on semiconductor device investigate radiation impact area on device by COMSOL simulation before fabricate semiconductor diode. COMSOL results show high temperature on active area of semiconductor device while exposed with SRFE process that may impact to device mechanism and electrical properties of device.
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    DOPING EFFECT FROM PT ATOM IN SILICON STRUCTURE AND TREATMENT BY ROENTGEN RADIATION FLASH EXPOSURE
    (2021-01-01)
    Sangwaranatee, Narong
    ;
    Srithanachai, Itsara
    ;
    Niemcharoen, Surasak
    In the present, semiconductor device has big change by using high technology to improve performance and push the limit of device to support with new product to support demand of human. One of the device we are still using in our life is power semiconductor, this can support many kind of work such as satellite, power electronics and automobile. The technique in this paper will focus by using the characteristics of Pt in silicon structure for high speed and treatment with flash Roentgen radiation exposure. In principle, Pt atom can generate trapping center in silicon structure and help for increase switching time for semiconductor base on silicon substrate. However, Pt has not only good property for device but still has damage in structure is generate cluster in silicon structure that make Pt atom not really help to improve performance completely. The another goal of this paper will using flash Roentgen radiation exposure help to treatment and destroy cluster from Pt atom in silicon structure.
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    Effect on C-V characteristics of P-N photodetector
    (2017-02-01)
    Chaiyasoonthorn, Sawatsakorn
    ;
    Srithanachai, Itsara
    ;
    Sangwaranatee, Narong
    This paper is aimed at investigating the way to reduce the Pt-doped effect on silicon N-Type photodetector. The influencing of Pt-doped on silicon mechanism is an important problem because the performance of semiconductor device may decrease as a result from this process. In this paper, the obtained experimental result has shown that the Roentgen radiation can be used to reduce the influence from Pt-doped process, where C-V characteristics are the parameters to study in this experiment, from which the Roentgen radiation characteristics may change because the silicon bulk absorbs radiation of about 60%. The results have indicated that the C-V characteristics are not significantly changed. This way, radiation may induce and reduce some of the defects in silicon bulk but C-V is without change. Accordingly, parameters should be investigated to explain the defects to confirm the influence of Roentgen radiation by I-V characteristics and carrier concentration.