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Author: search.filters.author.Srithanachai, ItsaraSubject: search.filters.subject.Soft X-ray annealing

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    Study on schottky diode characteristics improving by X-ray irradiation
    (2013-08-30)
    Klinsanit, Sani
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Khunkhao, Sunya
    ;
    Nararug, Budsara
    The effect of soft X-ray irradiation to the Schottky diode properties was analyzed in this paper. The built-in voltage, leakage current, and work function of Schottky diode were investigated. The current-voltage characteristics of the Schottky diode are measured at room temperature. After irradiation at 70 keV for 55 seconds the forward current and leakage current are increase slightly. On the other hand, the built-in voltage is decrease from the initial value about 0.12 V. Consequently, this method can cause the Schottky diode has low power consumption. The results show that soft X-ray can improve the characteristics of Schottky diode. © (2013) Trans Tech Publications Switzerland.
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    An experimental investigation of PN diode electrical characteristics by soft X-ray annealing method
    (2012-04-01)
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Poyai, Amporn
    ;
    Niemcharoen, Surasak
    ;
    Yupapin, Preecha P.
    We present new experimental results for the electrical behaviors of PN junction diodes irradiated by X-rays. The currentvoltage (IV) characteristics of the PN junction diodes were measured at room temperature. The reverse and forward current before and after irradiation can be explained relative to the following parameters: carrier generation lifetime (τ<inf>g</inf>), ideality factor (n), series resistance (R<inf>s</inf>), and sheet resistance (ρ). After irradiation at 40 and 55 keV, a small increment in the diode leakage current was seen, while at 70 keV of exposure, the leakage current was slightly decreased. On the other hand, the forward current was dramatically increased by about three orders of magnitude. In addition, the series resistance of the diodes was confirmed to be positively modified by the use of the soft X-ray annealing method. © 2011 Elsevier Ltd. All rights reserved.
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    New method for improving the electrical characteristics of P-N junction diode
    (2012-01-01)
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Poyai, Amporn
    ;
    Niemcharoen, Surasak
    This paper investigates the effect of soft X-ray irradiation various energy and times on PN junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.