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Author: search.filters.author.Sukkha, UsaSubject: search.filters.subject.Dielectric

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    Effect of Ba0.93Ca0.04La0.03Sn0.1Ti0.9O3 addition on structural and electrical properties of lead-free 0.5Ba(Zr0.2Ti0.8)O3-0.5(Ba0.7Ca0.3)TiO3 piezoelectric ceramics
    (2025-12-01)
    Kantha, Puripat
    ;
    Unruan, Muangjai
    ;
    Tunkasiri, Tawee
    ;
    Pengpat, Kamonpan
    ;
    Sukkha, Usa
    The doping of other materials into the structure of BCZT ceramics can improve the electrical properties. The lead-free piezoelectric ceramics in the (1-x)BCZT–xBCLST binary system, where x = 0.00, 0.01, 0.03, 0.05, and 0.07 mol, were synthesized using a two-step mixed oxide method. Initially, pure phases of 0.5Ba(Zr<inf>0.2</inf>Ti<inf>0.8</inf>)O<inf>3</inf>-0.5(Ba<inf>0.7</inf>Ca<inf>0.3</inf>)TiO<inf>3</inf> (BCZT) and Ba<inf>0.93</inf>Ca<inf>0.04</inf>La<inf>0.03</inf>Sn<inf>0.1</inf>Ti<inf>0.9</inf>O<inf>3</inf> (BCLST) powders were separately prepared by mixed oxide and conventional solid-state reaction methods. X-ray diffraction patterns and Ti K-edge X-ray Absorption Near-Edge Structure (XANES) spectra revealed structural distortions in BCLST-doped ceramics. The electrical properties including dielectric, piezoelectric, and ferroelectric properties were evaluated. Besides, the dielectric constant and dielectric loss at room temperature of BCZT–BCLST ceramics were enhanced with increasing BCLST content. The dielectric properties at room temperature improved with increasing BCLST concentration from x = 0.00 to x = 0.03 mol, with the maximum dielectric constant rising from 1408 to 2552—an increase of approximately 81 %. The hysteresis P–E loop of BCZT–BCLST ceramics exhibited a slim loop, with a maximum remanent polarization (P<inf>r</inf>) of 7.22 μC/cm<sup>2</sup> observed at x = 0.03 mol. The optimal doping condition for BCLST in BCZT ceramics was found at 0.03 mol, yielding the highest piezoelectric coefficient (d<inf>33</inf>) of 235 pC/N—an improvement of approximately 9 % compared to the undoped sample (x = 0.00).
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    Thermally induced phase transition and dielectric relaxation in lead-free BaTi0.94Sn0.06O3 Ceramics: Insights from in-situ XRD and XAS
    (2025-11-01)
    Sukkha, Usa
    ;
    Chanlek, Narong
    ;
    Kidkhunthod, Pinit
    ;
    Kolodiazhnyi, Taras
    ;
    Vittayakorn, Wanwilai
    Lead-free BaTi<inf>0.94</inf>Sn<inf>0.06</inf>O<inf>3</inf> (BTS) ceramics were synthesized using the conventional solid-state reaction method to investigate thermally induced phase transitions and dielectric relaxation phenomena. A combination of in-situ X-ray Diffraction (XRD) and in-situ Synchrotron X-ray Absorption Spectroscopy (XAS) was employed to examine phase transitions across the temperature range of 200–400 K. The results reveal sequential phase transitions: rhombohedral-orthorhombic (R + O) at 200 K, orthorhombic (O) at 250–300 K, tetragonal (T) at 325–359 K, and tetragonal-cubic (T + C) at 373–400 K. Dielectric measurements highlight an anomalous relaxation behavior at 70–160 K, attributed to domain wall freezing. This phenomenon follows Vogel-Fulcher behavior, with an activation energy of 14 meV, a freezing temperature of 82 K, and an attempt frequency of 4.7 × 10<sup>6</sup> Hz. X-ray Photoelectron Spectroscopy (XPS) analysis reveals oxygen deficiency on the surface of the BTS ceramic, resulting in the coexistence of Ti<sup>3+</sup>/Ti<sup>4+</sup> and Sn<sup>2+</sup>/Sn<sup>4+</sup> oxidation states. These defects significantly influence the dielectric and phase transition properties. This study provides comprehensive insights into the interplay between local structural changes and phase transition mechanisms in BTS ceramics. By employing a multi-technique approach, it advances the understanding of dielectric and ferroelectric behaviors, positioning BTS ceramics as promising candidates for lead-free dielectric and ferroelectric device applications.