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Author: search.filters.author.Torasa, Chonmapat

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    Optimization of electrical and optical properties of ITO thin films by annealing in air and nitrogen
    (2022-01-01)
    Torasa, Chonmapat
    ;
    Srithanachai, Itsara
    This paper will investigation the optimization of ITO thin films by various thin films deposited time with annealing under air and nitrogen environment. ITO will use for transparent electrode of photodetector that require high transparent and low resistivity. Thin films prepare by using RF sputtering technique by various sputter times 5, 15, 30 and 60 mins then annealing under air and nitrogen for 10 mins, 300 °C. Transparent of thin films after prepared at thickness around 1,166 µm and annealing under nitrogen environment show high transparent 89.8% at wavelength 1,170 nm and low resistivity 2.1 × 10<sup>−5</sup> ohm-cm. From the results of transparent and resistivity will get optimize thickness of thin films that use for transparent electrode of photodetector. By optimize thickness of ITO thin films is 413 nm with 87.6% transparent and 0.8 × 10<sup>−3</sup> ohm-cm resistivity.
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    Roentgen radiation response in P-N semiconductor device
    (2022-01-01)
    Torasa, Chonmapat
    ;
    Srithanachai, Itsara
    Radiation is an important for investigate semiconductor device process improvement area. Currently, radiation use for many areas in semiconductor device and one of application use semiconductor device for detector. However, radiation is one of part of cure process in semiconductor area although radiation has high energy and may impact to semiconductor device performance. The experiment of radiation exposed on semiconductor device investigate radiation impact area on device by COMSOL simulation before fabricate semiconductor diode. COMSOL results show high temperature on active area of semiconductor device while exposed with SRFE process that may impact to device mechanism and electrical properties of device.