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Subject: search.filters.subject.Magnetotransistor

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    The magnetotransistor for 2-axis magnetic field measurement in CMOS technology
    (2015-08-17)
    Leepattarapongpan, Chana
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    Phetchakul, Toempong
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    Pengpad, Puttapon
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    Srihapat, Arckom
    ;
    Jeamsaksiri, Wutthinan
    This paper presents a magnetotransistor for detecting magnetic field in vertical and lateral directions (B<inf>Y</inf> and B<inf>Z</inf>) by relying on the difference between base and collector currents (ΔI<inf>CB</inf>). It was designed and fabricated using CMOS fabrication technology. The device structure consisted of one emitter, 4 collectors and 4 bases. The experiment showed that, at 10 mA of biasing current, the B<inf>Y</inf> and B<inf>Z</inf> direction sensitivity to magnetic field within the range of 0 - 400 mT are 0.7 and 1.35 %/T, respectively. The sensitivity at emitter current 20mA are 0.55 and 0.7 %/T for vertical and lateral magnetic field directions, respectively. This research on the magnetotransistor produced magnetic sensors with small size, high performance with wide range of applications.
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    The increase sensitivity of PNP-magnetotransistor in CMOS technology
    (2015-02-02)
    Leepattarapongpan, Chana
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    Phetchakul, Toempong
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    Pengpad, Puttapon
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    Srihapat, Arckom
    ;
    Jeamsaksiri, Wutthinan
    This paper presents improve sensitivity of pnp-magnetotransistor for detect vertical magnetic field response. The device structure consisted of one emitter, four collectors and four bases. The four collectors are separate to form four terminals. The same is true for the four bases. The experiment showed that, at 2 and 4mA of biasing current, magnetic field in B<inf>Z</inf> direction sensitivity within the range of 0-400 mT are 0.045 and 0.09 mV/mT in single mode. The sensitivity of merge mode are 0.15 and 0.3 mV/mT. The magnetic field response of merge mode shows 4-time increase of the magnetic field sensitivity comparative to single mode.
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    The effect injection width and temperature-offset compensation of magnetotransistor
    (2011-12-01)
    Leepattarapongpan, Chana
    ;
    Phetchakul, Toempong
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    Penpondee, Naritchaphan
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    Pengpad, Puttapon
    ;
    Srihapat, Arckom
    This paper presents effect of injection witdh on Magnetotransistor. Emitter area was confined by LOCOS and the injection window size was varied from 4, 5 to 10 microns. With bias current of 3 mA the window size 4 micron gives best sensitivity at 10mV/T. Measument linearity is 0.1 % full scale. voltage gain of 10 was used for minimizing temperature coefficient to be around 7.9 mV/°C measured from 25 to 125 °C. Temperature coefficient divided by sensitivity give us a relative temperature sensitivity of 7.9 % T/°C. Second magnetic sensor device has been used for temperature compensation. The second device was config as magnetic field immune then it was used as a temperature offset voltage reference. The added module reduces overall temperature sensitivy down to 0.3 % T/°C. © 2011 Published by Elsevier Ltd.
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    The deflection length and emitter width on sensitivity of magnetotransistor
    (2011-10-04)
    Phetchakul, Toempong
    ;
    Sottip, Panyakorn
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    Leepattarapongpan, Chana
    ;
    Penpondee, Narichapan
    ;
    Pengpad, Putapon
    This paper presents a study of effect of deflection length and emitter width on sensitivity of magnetotransistor. The device has been fabrication on standard CMOS technology. It can detect magnetic field applied vertically to the chip. The structure consists of emitter (n-type), base (p-type) and collector (n-type) on silicon p-substrate. The device can sense magnetic field by Hall Effect theory and carrier deflection resulting to difference between base and collector current (ΔI<inf>CB</inf>) related to magnetic field (B <inf>Z</inf>) strength. From the experiment is comparing emitter width of 4, 5 and 10 micrometer at deflection length of 10 and 20 micrometer. The result shows that increase in injection emitter width cause to the sensitivity decreases and the deflection length of 20 micrometer is the best sensitivity. These results are very useful for developing the magnetotransistor for high sensitivity and performance. © 2011 IEEE.