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    DOPING EFFECT FROM PT ATOM IN SILICON STRUCTURE AND TREATMENT BY ROENTGEN RADIATION FLASH EXPOSURE
    (2021-01-01)
    Sangwaranatee, Narong
    ;
    Srithanachai, Itsara
    ;
    Niemcharoen, Surasak
    In the present, semiconductor device has big change by using high technology to improve performance and push the limit of device to support with new product to support demand of human. One of the device we are still using in our life is power semiconductor, this can support many kind of work such as satellite, power electronics and automobile. The technique in this paper will focus by using the characteristics of Pt in silicon structure for high speed and treatment with flash Roentgen radiation exposure. In principle, Pt atom can generate trapping center in silicon structure and help for increase switching time for semiconductor base on silicon substrate. However, Pt has not only good property for device but still has damage in structure is generate cluster in silicon structure that make Pt atom not really help to improve performance completely. The another goal of this paper will using flash Roentgen radiation exposure help to treatment and destroy cluster from Pt atom in silicon structure.
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    Capacitance-voltage (c-v) characteristic effect of pt atom power device
    (2016-06-01)
    Sangwaranatee, Narong
    ;
    Srithanachai, Itsara
    ;
    Yupapin, Preecha P.
    As Pt atoms may create problem into the surface and junction of the power device, the paper investigates the effect of Pt atoms in thermal annealing (TA) process for various temperature environments. Though experiments, the comparison between un-doped and Pt-doped results for 850 °C and 900 °C has been made. As per results obtained Pt atoms can be deeply diffused to the silicon bulk after the TA 2 process. While before this process, the Pt diffusion range was recorded to be 4,500A. It was found that there was no significant change in C-V characteristics of Pt-doped, when the Vbi of 0.4-0.5eV got achieved. Thus, the Pt atoms contact type is not changed and the carrier concentration is confirmed due to effect that Pt may induce trap or cluster that can reduce the power device carrier concentration.