KMITL

Permanent URI for this communityhttps://dspace.kmitl.ac.th/handle/123456789/1

Browse

Settings

Subject: search.filters.subject.Series resistance

Search Results

Now showing 1 - 3 of 3
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Item,
    An experimental investigation of PN diode electrical characteristics by soft X-ray annealing method
    (2012-04-01)
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Poyai, Amporn
    ;
    Niemcharoen, Surasak
    ;
    Yupapin, Preecha P.
    We present new experimental results for the electrical behaviors of PN junction diodes irradiated by X-rays. The currentvoltage (IV) characteristics of the PN junction diodes were measured at room temperature. The reverse and forward current before and after irradiation can be explained relative to the following parameters: carrier generation lifetime (τ<inf>g</inf>), ideality factor (n), series resistance (R<inf>s</inf>), and sheet resistance (ρ). After irradiation at 40 and 55 keV, a small increment in the diode leakage current was seen, while at 70 keV of exposure, the leakage current was slightly decreased. On the other hand, the forward current was dramatically increased by about three orders of magnitude. In addition, the series resistance of the diodes was confirmed to be positively modified by the use of the soft X-ray annealing method. © 2011 Elsevier Ltd. All rights reserved.
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Item,
    Improving forward current characteristics of diode by X-ray irradiation
    (2012-01-25)
    Niemcharoen, Surasak
    ;
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Poyai, Amporn
    These papers investigates the effect of X-ray on forward current characteristics of diode. The forward current of diode after X-ray irradiation energy 40 keV at the exposure time ranging 5, 10 second was increased, while 15 and 20 second was decreased. X-ray causes changing of the electrical characteristics of diode. Series resistance is the main factor for analyze on forward current characteristics. From the results, X-ray can improve performance of diode at the exposure time for 5 and 10 second. © (2012) Trans Tech Publications, Switzerland.
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Item,
    New method for improving the electrical characteristics of P-N junction diode
    (2012-01-01)
    Srithanachai, Itsara
    ;
    Ueamanapong, Surada
    ;
    Poyai, Amporn
    ;
    Niemcharoen, Surasak
    This paper investigates the effect of soft X-ray irradiation various energy and times on PN junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.