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    Item type:Publication,
    Characteristics of synthesized diamond films by using CACVD techniques at high temperatures
    (2010-01-01) ;
    Pongsai, S. B.
    This paper presents synthesized diamond films by using combustion activated chemical vapor deposition (CACVD) techniques. The characteristics of diamond films have been studied at wide ranges of temperature (30-400°C). The resistance of diamond films has been determined for hydrogen termination times of 5, 10, 15, and 20 minutes, and at the operation temperatures of 500, 600, and 700°C. The investigation found that, at 30°C a synthesized diamond film has a high resistance (10<sup>10</sup> Ω), whereas at high temperatures (100-400°C) the resistance has decreased from 4.04 MΩ to 2.42 MΩ. The result obtained from the hydrogen termination showed that the resistance has decreased by 10<sup>5</sup>-10<sup>6</sup> Ω (at 30° C). Summarily, it can be stated that the higher the hydrogen termination times and operation temperatures, the lower the resistance of diamond films. © (2010) Trans Tech Publications.