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    Item type:Publication,
    Design of a Digitally Controlled Tunable Matching Network Based on GaN FETs
    (2025-01-01) ;
    Rivas-Davila, Juan
    Radio frequency (RF) power amplifiers are integral to many academic, medical, and industrial applications. In many of these applications, dynamic impedance matching is a critical requirement. While conventional tunable matching networks (TMNs) with motor-controlled variable inductors/capacitors provide excellent matching range, their response times are inadequate for applications with rapid load changes. This paper presents a design of digitally controlled TMNs suitable for quick impedance matching at high frequencies (10s of MHz) and high power levels (100s of Watts). Our proposed matching system employs a secondary high-speed TMN based on wide bandgap GaN field effect transistors configured as digitally controlled variable capacitors in a double Pi network. The prototype system, tested at 13.56 MHz and 500 W, achieves impedance matching for loads with reflection coefficients up to 0.5 at any angle with less than 1% reflected power. Unlike techniques requiring device switching at RF frequency, our approach offers a simpler implementation while maintaining high power handling capability.
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    Item type:Publication,
    Broadband High-Frequency Power Modulation With Resistance Regulation Network
    (2025-01-01)
    Ye, Zhechi
    ;
    Stolt, Eric
    ;
    ;
    Rivas-Davila, Juan
    Efficient radio frequency (RF) power amplifiers (PAs) are essential in various industrial applications, where fast RF pulses are often required to enhance system performance. In this article, we present a novel approach to fast RF power modulation using a resistance regulation network (RRN) with frequency adjustment. The proposed method is complementary to existing systems and can be adapted to a wide range of power and frequency levels. To illustrate the general design methodology of the RRN, we use an inductively coupled, double-tuned network as an example. We also discuss its loading effects and provide design guidelines for broadband switched-mode PAs. A 300 W class-Φ<inf>2</inf> amplifier with RRN is implemented and tested, achieving a peak efficiency of 94%. Operating between 13.2 and 14.4 MHz, the amplifier is capable of doubling its output power within 500 ns while maintaining zero-voltage-switching (ZVS).
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