Teesetsopon, Pichanan

Loading...
Thumbnail Image
Preferred name
Teesetsopon, Pichanan
Main Affiliation
Email
pichanan.te@kmitl.ac.th

Settings

Now showing 1 - 1 of 1
  • Loading...
    Thumbnail Image
    Some of the metrics are blocked by your 
    consent settings
    Item type:Publication,
    Effective performance for undoped and boron-doped double-layered nanoparticles-copper telluride and manganese telluride on tungsten oxide photoelectrodes for solar cell devices
    (2016-11-01)
    Srathongluan, Pornpimol
    ;
    Vailikhit, Veeramol
    ;
    Teesetsopon, Pichanan
    ;
    Choopun, Supab
    ;
    Tubtimtae, Auttasit
    This work demonstrates the synthesis of a novel double-layered Cu<inf>2−x</inf>Te/MnTe structure on a WO<inf>3</inf> photoelectrode as a solar absorber for photovoltaic devices. Each material absorber is synthesized using a successive ionic layer adsorption and reaction (SILAR) method. The synthesized individual particle sizes are Cu<inf>2−x</inf>Te(17) ∼5–10 nm and MnTe(3) ∼2 nm, whereas, the aggregated particle sizes of undoped and boron-doped Cu<inf>2−x</inf>Te(17)/MnTe(11) are ∼50 and 150 nm, respectively. The larger size after doping is due to the interconnecting of nanoparticles as a network-like structure. A new alignment of the energy band is constructed after boron/MnTe(11) is coated on boron/Cu<inf>2−x</inf>Te nanoparticles (NPs), leading to a narrower E<inf>g</inf> equal to 0.58 eV. Then, the valence band maximum (VBM) and conduction band minimum (CBM) with a trap state are also up-shifted to near the CBM of WO<inf>3</inf>, leading to the shift of a Fermi level for ease of electron injection. The best efficiency of 1.41% was yielded for the WO<inf>3</inf>/boron-doped [Cu<inf>2−x</inf>Te(17)/MnTe(11)] structure with a photocurrent density (J<inf>sc</inf>) = 16.43 mA/cm<sup>2</sup>, an open-circuit voltage (V<inf>oc</inf>) = 0.305 V and a fill factor (FF) = 28.1%. This work demonstrates the feasibility of this double-layered structure with doping material as a solar absorber material.