Limsuwan, Pichet

Preferred name

Limsuwan, Pichet

Alternative Name

Limsuwan, P.

Main Affiliation

School of Science

pichet.li@kmitl.ac.th

Now showing 1 - 7 of 7

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Investigation of the characteristic of the Nd:YAG laser for standard wavelength in metrology
(2013-10-08)
Potirak, Prayut
;
Ranusawud, Monludee
;
Limsuwan, Pichet
;
Buranasiri, Prathan
This research studied characteristics of the Nd:YAG laser with second harmonic generation (SHG) at 532 nm. It can be develop as a standard wavelength according to the recommendation made by the Comite' International des Poids et Measures (CIPM). This study investigates various parameters that effect wavelength and laser power of the Nd:YAG laser such as injection current of diode laser, temperature of Nd:YAG crystal and second harmonic generator crystal. Its wavelength can be tuned in the range of standard wavelength at 532.24503 nm with 10<sup>-7</sup> of stability. © (2013) Trans Tech Publications, Switzerland.
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Investigation of direct metal laser sintering process of iron powder with low laser power
(2018-01-01)
Thongsuwan, S.
;
Ranusawud, A.
;
Limsuwan, P.
;
Jaiyen, S.
;
Buranasiri, P.
Laser additive manufacturing (LAM) is layer by layer built up a 3-D part using either a bed or stream of powdered material. In this paper, the heat transfer and melt solidification of iron powder in the direct metal laser sintering (DMLS) process with low laser powers have been experimental investigated. The experimental results of various properties of each layer and properties among the multiple layers due to the laser power, the scanner rate, of the frequency of the laser pulse, have been shown and discussed. The process will be improved by numerical modeling in the future.
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Investigation on optical integration between LED Mid-IR light sources and Si-based waveguides for sensing applications
(2022-01-07)
Jaturaphagorn, Pawaphat
;
Chaisakul, Papichaya
;
Chattham, Nattaporn
;
Limsuwan, Pichet
Research on mid-IR silicon-based waveguides has recently received strong interest. Particularly, this paper focuses on one of the critical issues in micron-scale photonic integrated circuits, which is to efficiently couple a mid-IR LED (light emitting diode) light source to an external micron-scale waveguide. The optical coupling scheme is crucial for the exploitation of LED light sources in waveguide-based spectroscopic sensing applications. This paper reports optical coupling scheme between an LED mid-IR light source and a silicon rich silicon nitride (SiN) waveguide that could enable the use of LED-based light sources. Finally, the detection limit of the investigated device for carbon dioxide gas detection is calculated.
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FDTD investigation of adiabatic optical coupling between Silicon nitride and Germanium-based optical structures for energy-efficient photonic integration
(2023-01-01)
Khongpetch, Natdanai
;
Chaisakul, Papichaya
;
Traiwattanapong, Worawat
;
Chiangga, Surasak
;
Limsuwan, Pichet
This paper aims to investigate the potential of a direct integration between Si3N4 waveguides and Germanium(Ge)-based structures, which are considered two of the most promising silicon(Si)-compatible materials for passive and active functions for Si-based energy-efficient photonics, respectively. This paper focuses on investigating the vertical coupling scheme between these materials employing a tapered structure of the Ge-based layer using 2D FDE and 3D FDTD simulations, to match the optical mode from a passive Si3N4 waveguide to the Ge-based layer and vice versa. The expected optical coupling performance will be reported, and its dependence on the unavoidable fabrication variation in the coupling region will be also investigated. Additionally, the coupling performance of the vertical coupling approach compared to the previous investigation between a Si waveguide and a Ge layer will be addressed.
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Effect of temperature on the absorption of rubidium vapor cell D2 line studied by two-photon absorption spectroscopy
(2018-01-01)
Thanaboonrungroch, Nut
;
Buranasiri, Prathan
;
Limsuwan, Pichet
;
Yindeesook, Witoon
In this research, the effect of temperature on the absorption of rubidium vapor cell D<inf>2</inf> line was studied by Two-photon absorption spectroscopy. The diameter and length of cylindrical rubidium vapor cell used in this research are 25.65 mm and 82.12 mm, respectively. The temperature of rubidium cell was varied from room temperature to approximately 80 °C using a peltier-thermoelctric module. The laser diode at 778 nm was used as a light source for two-photon absorption spectroscopy. The absorption spectra of rubidium D<inf>2</inf> hyperfine transitions were recorded in the range of 200-1100 nm.The results show that the absorption peak at high temperature is higher than that of lower temperature.
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Effect of Mn doping in CdS quantum dot sensitized solar cells grown by SILAR method
(2021-01-01)
Srisomroop, Juthapak
;
Wichaiyo, Napasuda
;
Gaewdang, Thitinai
;
Wongcharoen, Ngamnit
;
Limsuwan, Pichet
The manganese-doped cadmium sulfide (Mn-doped CdS) quantum dots on titanium dioxide nanoparticles was fabricated using the successive ionic layer absorption and reaction (SILAR) method. The quantum dots were applied to photovoltaic cells. The mixing percentage of manganese in cadmium sulfide precursors was in the range of 1-20 mol%. The study of transport mechanisms and photovoltaic properties of the Mn-doping into CdS QD were investigated using a solar simulator (AM 1.5 G) and current-voltage (J-V) measurements in the dark and under illumination conditions (100 mW/cm2) at room temperature. The photovoltaic performance results indicate that Mn-doped in CdS ratio of 15 mol% exhibits the photovoltaic performance maximum convention efficiency (PCE) is 0.33%. The X-ray diffraction (XRD) patterns of Mn/CdS photoanodes show the nanoparticle average grain size in the range of 4-5 nm, which the formation of the nanoparticles was confirmed by scanning electron microscopy (SEM). The energy dispersion spectroscopy (EDS) shows that Mn is doped into the lattice of CdS QDs. The optical property of the quantum dots was investigated by UV-VIS absorption spectroscopy. The optical band gap was obtained and found to be 2.19 eV from Tauc's plot technique.
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The investigation of iodine cell temperature control in frequency stabilized Nd:YAG laser system
(2017-01-01)
Potirak, P.
;
Ranusawud, M.
;
Limsuwan, P.
;
Buranasiri, P.
In this research, the temperature characteristics of a 10 cm long iodine cell used in diode-pumped Nd:YAG laser system has been investigated. Here, the laser system were frequency stabilized by locking their frequency-doubled output at 563 THz. The absolute frequency measurement of the a<inf>10</inf> hyperfine components of molecular iodine R(56) 32-0 line with effect to various temperatures is reported. With the iodine cell temperature control, the output frequency is tuned in the range of standard frequency at 563.2602235 THz with about 10<sup>-9</sup> of stability.
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Limsuwan, Pichet

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