Ramamoorthy, Harihara

Preferred name

Alternative Name

Ramamoorthy, H.

Main Affiliation

School of Engineering

harihara.ra@kmitl.ac.th

Now showing 1 - 10 of 18

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CVD Synthesis of MoS2 Using a Direct MoO2 Precursor: A Study on the Effects of Growth Temperature on Precursor Diffusion and Morphology Evolutions
(2023-07-01)
Somphonsane, Ratchanok
;
Chiawchan, Tinna
;
Bootsa-ard, Waraporn
;
Ramamoorthy, Harihara
In this study, the influence of growth temperature variation on the synthesis of MoS<inf>2</inf> using a direct MoO<inf>2</inf> precursor was investigated. The research showed that the growth temperature had a strong impact on the resulting morphologies. Below 650 °C, no nucleation or growth of MoS<inf>2</inf> occurred. The optimal growth temperature for producing continuous MoS<inf>2</inf> films without intermediate-state formation was approximately 760 °C. However, when the growth temperatures exceeded 800 °C, a transition from pure MoS<inf>2</inf> to predominantly intermediate states was observed. This was attributed to enhanced diffusion of the precursor at higher temperatures, which reduced the local S:Mo ratio. The diffusion equation was analyzed, showing how the diffusion coefficient, diffusion length, and concentration gradients varied with temperature, consistent with the experimental observations. This study also investigated the impact of increasing the MoO<inf>2</inf> precursor amount, resulting in the formation of multilayer MoS<inf>2</inf> domains at the outermost growth zones. These findings provide valuable insights into the growth criteria for the effective synthesis of clean and large-area MoS<inf>2</inf>, thereby facilitating its application in semiconductors and related industries.
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Spin Seebeck effect and large spin conversion in amorphous Fe2TiSb/polycrystalline Y3Fe5O12 thin films
(2024-05-30)
Wongjom, Poramed
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Wongjom, Chalothon
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Pongophas, Ekkarat
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Infahsaeng, Yingyot
;
Maiaugree, Wasan
This study investigates spin current generation in a Fe<inf>2</inf>TiSb/Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> multi-layer thin film as prepared via the magnetron sputtering method. Comprehensive characterization techniques are employed to assess film properties, including X-ray diffraction, energy-dispersive X-ray spectroscopy, Scanning electron microscopy, and Vibrating sample magnetometer. The Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> material exhibits a polycrystalline ferromagnetic insulator behavior, while the 20 nm-thick Fe<inf>2</inf>TiSb film displays small ferromagnetic metal properties with an amorphous structure. Spin current analysis utilizes the longitudinal spin Seebeck effect configuration, considering magnetic field and temperature dependencies and the results show that spin conversion within the Fe<inf>2</inf>TiSb/Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> structure is influenced by both the spin Seebeck effect and the anomalous Nernst effect, resulting in an overall spin signal enhancement. The spin Seebeck coefficient of Fe<inf>2</inf>TiSb/Y<inf>3</inf>Fe<inf>5</inf>O<inf>12</inf> was approximately 0.103 μV/K within a magnetic field of 300 mT.
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Advances in 2D Material Transfer Systems for van der Waals Heterostructure Assembly
(2024-07-01)
Somphonsane, Ratchanok
;
Buapan, Kanokwan
;
Ramamoorthy, Harihara
The assembly of van der Waals (vdW) heterostructures using 2D material transfer systems has revolutionized the field of materials science, enabling the development of novel electronic and optoelectronic devices and the probing of emergent phenomena. The innovative vertical stacking methods enabled by these 2D material transfer systems are central to constructing complex devices, which are often challenging to achieve with traditional bottom-up nanofabrication techniques. Over the past decade, vdW heterostructures have unlocked numerous applications leading to the development of advanced devices, such as transistors, photodetectors, solar cells, and sensors. However, achieving consistent performance remains challenging due to variations in transfer processes, contamination, and the handling of air-sensitive materials, among other factors. Several of these challenges can be addressed through careful design considerations of transfer systems and through innovative modifications. This mini-review critically examines the current state of transfer systems, focusing on their design, cost-effectiveness, and operational efficiency. Special emphasis is placed on low-cost systems and glovebox integration essential for handling air-sensitive materials. We highlight recent advancements in transfer systems, including the integration of cleanroom environments within gloveboxes and the advent of robotic automation. Finally, we discuss ongoing challenges and the necessity for further innovations to achieve reliable, cleaner, and scalable vdW technologies for future applications.
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Signatures of hot carriers and hot phonons in the re-entrant metallic and semiconducting states of Moiré-gapped graphene
(2023-12-01)
Nathawat, Jubin
;
Mansaray, Ishiaka
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Sakanashi, Kohei
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Wada, Naoto
;
Randle, Michael D.
Stacking of graphene with hexagonal boron nitride (h-BN) can dramatically modify its bands from their usual linear form, opening a series of narrow minigaps that are separated by wider minibands. While the resulting spectrum offers strong potential for use in functional (opto)electronic devices, a proper understanding of the dynamics of hot carriers in these bands is a prerequisite for such applications. In this work, we therefore apply a strategy of rapid electrical pulsing to drive carriers in graphene/h-BN heterostructures deep into the dissipative limit of strong electron-phonon coupling. By using electrical gating to move the chemical potential through the “Moiré bands”, we demonstrate a cyclical evolution between metallic and semiconducting states. This behavior is captured in a self-consistent model of non-equilibrium transport that considers the competition of electrically driven inter-band tunneling and hot-carrier scattering by strongly non-equilibrium phonons. Overall, our results demonstrate how a treatment of the dynamics of both hot carriers and hot phonons is essential to understanding the properties of functional graphene superlattices.
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Universal scaling of weak localization in graphene due to bias-induced dispersion decoherence
(2020-12-01)
Somphonsane, R.
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Ramamoorthy, H.
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He, G.
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Nathawat, J.
;
Yin, S.
The differential conductance of graphene is shown to exhibit a zero-bias anomaly at low temperatures, arising from a suppression of the quantum corrections due to weak localization and electron interactions. A simple rescaling of these data, free of any adjustable parameters, shows that this anomaly exhibits a universal, temperature- (T) independent form. According to this, the differential conductance is approximately constant at small voltages (V < k<inf>B</inf>T/e), while at larger voltages it increases logarithmically with the applied bias. For theoretical insight into the origins of this behaviour, which is inconsistent with electron heating, we formulate a model for weak-localization in the presence of nonequilibrium transport. According to this model, the applied voltage causes unavoidable dispersion decoherence, which arises as diffusing electron partial waves, with a spread of energies defined by the value of the applied voltage, gradually decohere with one another as they diffuse through the system. The decoherence yields a universal scaling of the conductance as a function of eV/k<inf>B</inf>T, with a logarithmic variation for eV/k<inf>B</inf>T > 1, variations in accordance with the results of experiment. Our theoretical description of nonequilibrium transport in the presence of this source of decoherence exhibits strong similarities with the results of experiment, including the aforementioned rescaling of the conductance and its logarithmic variation as a function of the applied voltage.
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Versatile, Low-Cost, and Portable 2D Material Transfer Setup with a Facile and Highly Efficient DIY Inert-Atmosphere Glove Compartment Option
(2021-07-20)
Buapan, Kanokwan
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Somphonsane, Ratchanok
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Chiawchan, Tinna
;
Ramamoorthy, Harihara
Research in van der Waals heterostructures has been rapidly progressing in the past decade, thanks to the art of sequential and deterministic placement of one two-dimensional (2D) material over another. The successful creation of heterostructures however has relied largely on expensive transfer systems that are not easily accessible to researchers. Although a few reports on low-cost systems have recently surfaced, the full functionality, portability features, and overall effectiveness of such systems are still being explored. In this work, we present an "all-in-one"low-cost transfer setup that is compact, lightweight, and portable and which can be quickly installed with a facile and do it yourself (DIY)-style anaerobic glovebox option that performs at par with commercial anaerobic systems. The "installable"glovebox option means the user has the convenience of quickly converting the working environment into an inert one when air-sensitive 2D materials are used. The lowest RH values obtained in our glovebox is <3%, and the O2 levels rapidly drop from 21% to less than 0.1% in just a few minutes of purging the chamber with inert gas. The transfer system is also equipped with a light-weight PID-controlled substrate heating option that can be easily assembled within just a few hours. We test the versatility of our low-cost system by the successful creation of hexagonal boron nitride (hBN)-encapsulated graphene and hBN-encapsulated molybdenum disulphide (MoS2) heterostructures using the hot pickup technique and graphene-hBN, MoS2-hBN, twisted MoS2, and twisted MoS2 on hBN stacks using the wetting technique, and a MoS2-hBN-graphene vertical tunneling heterostructure was formed using a combination approach. The effectiveness of the DIY glovebox is proven with the demonstration of extended stability of freshly exfoliated black phosphorous (BP) flakes, their encapsulation between thin hBN layers, and the formation of electrically contacted BP devices with a protective hBN top layer. At an overall price point of approximately 1000 $, the versatile setup presented here is expected to further contribute to the growth of research in 2D materials, in particular, for researchers initially faced with overcoming a huge entry-level threshold to work in the field of 2D materials and van der Waals heterostructures.
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Cost-Effective Experimental Setup for Studies of Spin Seebeck Effect and Electrical Transport in Thermoelectric Materials
(2020-06-01)
Wongjom, Poramed
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Thongsamrit, Wannisa
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Ramamoorthy, Harihara
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Chinwong, Suriya
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Somphonsane, Ratchanok
In this article, we report on the design of a low-cost, accurate, and easy-to-implement roomerature experimental setup to comprehensively study the spin Seebeck effect (SSE) in ferrimagnetic insulators (FIs). Neodymium permanent magnets (NdPMs) are used to generate a fixed uniform magnetic field while the sample is staged in a custom-designed vacuum chamber containing thermal baths (for generating the required temperature gradient) and a complete 360° sample rotation mechanism (for studying the magnetic field angle dependence). Our experiments reveal excellent magnetic field uniformity (±1%) formed between the magnet poles, a highly accurate temperature gradient stability (±1%), and excellent agreement of the longitudinal SSE (LSSE) response for the Pt/YIG structure studied here with those reported in the literature. We also measure the anomalous Nernst effect (ANE) exhibited in a graphite sample, demonstrating the capability of our setup to accurately measure this parameter. Finally, we demonstrate that our setup can also be used to measure the conventional Seebeck effect (SE) and the electrical resistivity of commercially obtained Bi<inf>2</inf>Te<inf>3</inf> samples, making it a versatile tool for the broad characterization of thermoelectric materials.
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Investigating the shunting effect in a Fe/Co ferromagnetic metal hybrid structure and its impact on the spin Seebeck effect
(2024-03-01)
Phumying, Santi
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Wongjom, Chalothon
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Pongophas, Ekkarat
;
Infahsaeng, Yingyot
;
Maiaugree, Wasan
The generation of spin voltage by heat, known as the spin Seebeck effect (SSE), involves the injection of spin current from a ferromagnetic to a normal metal. In this study, the shunting effect in SSE is investigated within a hybrid structure consisting of iron (Fe) and cobalt (Co) films deposited on a Si-wafer substrate using thermal evaporation [Si/Fe(500 nm)/Co(10 nm)]. Spin voltage measurements performed in the in-plane configuration revealed a voltage reversal in the Co film and Fe film. However, in the hybrid structure (Si/Fe/Co), the voltage signal exhibited consistent directionality. This intriguing observation hints at a potential shunting effect, wherein the voltage influence from the Fe layer contributes to the Co film. Consequently, it is deduced that a significant shunting effect occurs when the resistivity of Fe is approximately three orders of magnitude lower than that of the Co film. This insight sheds light on the intricate dynamics of spin thermoelectric applications, emphasizing the role of material properties in optimizing performance.
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Remote Mesoscopic Signatures of Induced Magnetic Texture in Graphene
(2021-02-25)
Arabchigavkani, N.
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Somphonsane, R.
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Ramamoorthy, H.
;
He, G.
;
Nathawat, J.
Mesoscopic conductance fluctuations are a ubiquitous signature of phase-coherent transport in small conductors, exhibiting universal character independent of system details. In this Letter, however, we demonstrate a pronounced breakdown of this universality, due to the interplay of local and remote phenomena in transport. Our experiments are performed in a graphene-based interaction-detection geometry, in which an artificial magnetic texture is induced in the graphene layer by covering a portion of it with a micromagnet. When probing conduction at some distance from this region, the strong influence of remote factors is manifested through the appearance of giant conductance fluctuations, with amplitude much larger than e2/h. This violation of one of the fundamental tenets of mesoscopic physics dramatically demonstrates how local considerations can be overwhelmed by remote signatures in phase-coherent conductors.
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Investigation of the high-field transport, Joule-heating-driven conductivity improvement and low-field resistivity behaviour in lightly-reduced free-standing graphene oxide papers
(2022-06-16)
Thamkrongart, Krongtham
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Ramamoorthy, Harihara
;
Buapan, Kanokwan
;
Chiawchan, Tinna
;
Somphonsane, Ratchanok
Free-standing reduced graphene oxide (rGO) has been gaining popularity for its use in supercapacitors and battery applications due its facile synthesis, multi-layered structure, and high-current carrying capacity. Pertinent to the successful implementation of such applications, however, is the need to develop a thorough understanding of the electrical properties of such materials when subject to high applied electric fields. In this work, we undertake a detailed study of high-field electrical properties of mm-scale, lightly-reduced, rGO papers. Our results reveal that the I-V curves exhibit substantial nonlinearity with associated hysteresis that depends strongly on the applied electric field. The nonlinear behaviour which was interpreted using conventional transport models of Fowler-Nordheim tunnelling and space charge limited conduction revealed that while these models provided good qualitative fits to our data, they were quantitatively lacking, thus leaving the issue of high-field transport mechanisms in rGO open for debate. Careful I-V cycling experiments with measurement time-delay introduced between cycles revealed that the observed hysteresis contained recoverable and non-recoverable parts that we identified as arising from charge trapping and Joule heating effects, respectively. Time-dependent measurements showed that these effects were characterized by two distinct time scales. Importantly, the Joule heating was found to cause a permanent conductivity improvement in the rGO via the 'current annealing' effect by effectively eliminating oxygenated groups from the rGO. The analysis of the electrical breakdown in our samples resembled a thermal runaway-like event that resulted in premature damage to the rGO. Finally, we investigated the low-field resistivity in the 80 K-300 K temperature range. The reduced activation energy analysis revealed a robust power law behaviour below 230 K, while deviating from this trend at higher temperatures. For samples that received current annealing treatment, a reduced value for the power law exponent was obtained, confirming the effective lowering of disordered regions.

Ramamoorthy, Harihara

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