Khemasiri, Narathon

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Khemasiri, Narathon
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Khemasiri, N.
Email
narathon.kh@kmitl.ac.th

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    Item type:Publication,
    Optical band engineering of metal-oxynitride based on tantalum oxide thin film fabricated via reactive gas-timing RF magnetron sputtering
    (2016-11-25)
    Khemasiri, N.
    ;
    Jessadaluk, S.
    ;
    Chananonnawathorn, C.
    ;
    Vuttivong, S.
    ;
    Lertvanithphol, T.
    In this paper, we demonstrate a novel technique, as called reactive gas-timing (RGT) RF magnetron sputtering, to control and design an optical band engineering of TaON thin films without an external heating substrate temperature and post annealing treatment process. The influence of the oxygen intervals ranged from 5 to 60 s on deposition rate, chemical composition and optical properties of TaON thin films were investigated. The chemical composition was characterized by auger electron spectroscopy (AES). The optical properties were determined by UV–Vis spectrophotometer and spectroscopic ellipsometry. The nitrogen atomic concentration of the TaON thin films deposited by RGT decreased when the oxygen gas-timing intervals increased. In addition, the RGT sputtered TaON films could be demonstrated band gaps engineering from 1.90 to 2.15 eV.
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    Item type:Publication,
    Tantalum oxide bio-photonics thin film grown by gas-timing innovation technique
    (2013-09-18)
    Khemasiri, N.
    ;
    Porntheeraphat, S.
    ;
    Horprathum, M.
    ;
    Chananonnawathorn, C.
    ;
    Bunjongpru, W.
    Tantalum oxide (TaxOy) as high refractive index material has been grown on p-type silicon and quartz substrates by R.F. magnetron sputtering with our innovative technique called "reactive-gas timing". The reactive gas timing technique is an on-off time period sequence between argon (Ar) and oxygen (O2) plasma during sputtering process. The technique of gas-timing plays the effect on the properties of TaxOy thin film. The bombarded Ar-plasma was varied at 2, 5 and 8 sec, while the period of reactive O2-plasma was kept at 5 sec in this experiment. The physical and optical properties were investigated by using X-ray diffraction (XRD), Atomic Force Microscope (AMF), UV-Visible spectrometer and Spectroscopic Ellipsometer, respectively. The XRD spectra and AFM photographs show all films are amorphous phase with smooth feature. Meanwhile the transmittance of sputtered thin film decreases with 10% and the absorption edge shifts to lower energy with the increasing of the argon period from 2 sec to 8 sec. The refractive index as showed by ellipsometry slightly increases from 2.08 to 2.17 at wavelength 550 nm with the increasing of argon period from 2 sec to 8 sec. The increasing of the refractive index might dues to tantalum (Ta) rich which consists in thin films. The Ar-plasma period in the deposited film plays an important role on the properties of the TaxOy thin films especially as optical refractive index material. © 2013 SPIE.
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    Spectroscopic study on amorphous tantalum oxynitride thin films prepared by reactive gas-timing RF magnetron sputtering
    (2019-10-30)
    Lertvanithphol, T.
    ;
    Rakreungdet, W.
    ;
    Chananonnawathorn, C.
    ;
    Eiamchai, P.
    ;
    Limwichean, S.
    The amorphous tantalum oxynitride (TaO<inf>x</inf>N<inf>y</inf>) thin films were prepared on silicon (100) substrates by magnetron sputtering system with different techniques of conventional reactive sputtering and reactive gas-timing (RGT). The films were studied via spectroscopic ellipsometry (SE) measured in the range of 0.75–5.0 eV with 0.025 eV interval at 70° incident angle, and the optical model based on Tauc-Lorentz function was constructed to extract the properties of the films. The SE results indicated that all prepared films were grown homogeneously and show different optical properties upon their deposition conditions and techniques. The optical properties of film prepared by conventional reactive sputtering were close to the tantalum oxide film (TaO). The refractive index and optical band gap (E<inf>g</inf>) of RGT samples changed with the oxygen timing and correlated with the change of oxygen and nitrogen concentration of the films. In addition, the morphologies, crystallinities, atomic concentrations and distributions of nitrogen atoms in the films analyzed by field-emission scanning electron microscopy, glazing-incident X-ray diffraction, X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are also discussed.