Khemasiri, Narathon

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Khemasiri, Narathon
Alternative Name
Khemasiri, N.
Email
narathon.kh@kmitl.ac.th

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    Item type:Publication,
    High sensitive nanocrystal titanium nitride EG-FET pH sensor
    (2013-10-29)
    Rayanasukha, Yossawat
    ;
    Porntheeraphat, Supanit
    ;
    Bunjongpru, Win
    ;
    Khemasiri, Narathon
    ;
    Pankiew, Apirak
    Solid state pH-sensor device with high efficiency has successfully prepared by using TiN thin film as sensing membrane of extended gate field effect transistor (EG-FET) device. This research has described the physical properties and sensing characteristics of TiN membrane thin film which deposited on SiO<inf>2</inf>/Si substrate through reactive D.C. magnetron sputtering system. Thenanocrytal-TiNwith anatasestructure depended on substrate heating conditions was revealed from glancing angle x-ray diffraction. The I<inf>DS</inf>-V<inf>GS</inf> measurement in the standard buffer solutions showed that the sensitivity of fabricated TiN-EGFET pH deviceis 59.82mV/pH. © (2013) Trans Tech Publications, Switzerland.
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    Determination of thickness and optical properties of tantalum oxide thin films by spectroscopic ellipsometry
    (2014-01-01)
    Chananonnawathorn, Chanunthorn
    ;
    Khemasiri, Narathon
    ;
    Srichaiyaperk, Thanat
    ;
    Samransuksamer, Benjarong
    ;
    Horprathum, Mati
    Tantalum oxide (Ta<inf>2</inf>O<inf>5</inf>) thin films were prepared, at different deposition time, by a DC reactive magnetron sputtering. During the deposition, a high-quality tantalum target was sputtered under argon and oxygen ambience on to silicon (100) and glass substrates. The prepared thin films were systematically characterized for both physical and optical properties based on spectroscopic ellipsometry (SE), and consequently confirmed by several methods. With the SE physical models, we could determine the thin film thickness as well as their inhomogeneity. The films thickness results were directly confirmed by field-emission scanning electron microscopy (FE-SEM) used to observe cross-sections, and surface profiler used to measure the physical thickness of the films. With the SE optical models, we applied both the Cauchy and Tauc-Lorentz dispersions in order to obtain the optical constants, to be directly compared with those from the Swanepoel method (SM). Our result showed that from the SE analyses, the SE physical model was obtained as the multi-layer configurations. The obtained Ta<inf>2</inf>O<inf>5</inf> thin film thickness was closely related with the measured result from the FE-SEM cross-sectional micrographs and the surface profiler. For the optical characteristic, the double layer physical model was best optimized with the Tauc Lorentz dispersion model for the most accurate results. In comparison, the SM technique also demonstrated a capability to determine both the film thickness and its refractive index only from some samples. Therefore, this study proved that the SE technique successfully and accurately determine both the physical and optical properties of the Ta<inf>2</inf>O<inf>5</inf> thin films. © (2014) Trans Tech Publications, Switzerland.
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    Spectroscopic study on amorphous tantalum oxynitride thin films prepared by reactive gas-timing RF magnetron sputtering
    (2019-10-30)
    Lertvanithphol, T.
    ;
    Rakreungdet, W.
    ;
    Chananonnawathorn, C.
    ;
    Eiamchai, P.
    ;
    Limwichean, S.
    The amorphous tantalum oxynitride (TaO<inf>x</inf>N<inf>y</inf>) thin films were prepared on silicon (100) substrates by magnetron sputtering system with different techniques of conventional reactive sputtering and reactive gas-timing (RGT). The films were studied via spectroscopic ellipsometry (SE) measured in the range of 0.75–5.0 eV with 0.025 eV interval at 70° incident angle, and the optical model based on Tauc-Lorentz function was constructed to extract the properties of the films. The SE results indicated that all prepared films were grown homogeneously and show different optical properties upon their deposition conditions and techniques. The optical properties of film prepared by conventional reactive sputtering were close to the tantalum oxide film (TaO). The refractive index and optical band gap (E<inf>g</inf>) of RGT samples changed with the oxygen timing and correlated with the change of oxygen and nitrogen concentration of the films. In addition, the morphologies, crystallinities, atomic concentrations and distributions of nitrogen atoms in the films analyzed by field-emission scanning electron microscopy, glazing-incident X-ray diffraction, X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are also discussed.