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    Item type:Publication,
    Improved Transparent Gas Sensor Properties of Cu-Doped SnO2 Films using O2 Plasma Treatment
    Cu-doped SnO<inf>2</inf> films were deposited on glass slide substrate using an RF magnetron sputtering method. The effects of O<inf>2</inf> partial pressures in the deposition process and post O<inf>2</inf> plasma treatment were assessed for optical and sensing properties. O<inf>2</inf> partial pressures from 2% to 10% were assessed. Post-plasma treatment used a 15 mL/min O<inf>2</inf> flow, 450 °C annealing temperature and 30 min treatment time. Optical transmission spectra showed that the films deposited at higher O<inf>2</inf> partial pressures had higher transparency and increased band gaps from 3.08 to 3.78 eV. After O<inf>2</inf> plasma treatment, the films showed better than optical transmission. However, when the O<inf>2</inf> partial pressure increased to 10%, the optical transmission declined slightly because the film had higher surface roughness, smaller crystals and fewer oxygens in the parent rutile tetragonal cells, enhanced the sensor response at room temperature.