Somdock, Nuttakrit
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Item type:Publication, Advanced AlN/SiO2/AlN multilayer coatings for protecting gold-like decorative surfaces: Improved hardness and color stability(2025-12-01); ; This study explores the development of multilayer AlN/SiO<inf>2</inf>/AlN thin film coatings to enhance tarnish resistance, surface hardness, and color stability of gold-coated silver substrates for decorative use. Gold films were deposited via electroplating, followed by multilayer coatings using reactive magnetron sputtering. The SiO<inf>2</inf> thickness was systematically varied while maintaining fixed AlN layers. Optical evaluations using CIE Lab parameters confirmed that the specimen with a 110-min SiO<inf>2</inf> layer exhibited acceptable color difference (ΔE < 5). X-ray photoelectron spectroscopy (XPS) revealed stable Al–N and Si–O bonds with minimal oxidation. Nanoindentation tests showed a significant hardness increase, reaching 7.02 ± 0.62 GPa. After 240 days of ambient exposure, multilayer-coated samples showed no visible discoloration or sulfur-induced degradation, unlike uncoated and electrochemically coated samples. These results confirm that AlN/SiO<inf>2</inf>/AlN multilayers effectively improve the durability and aesthetic stability of gold-like surfaces, offering a promising solution for long-term decorative applications. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Post-ball-milling-assisted solid-state synthesis of Bi4O4SeCl2: A low thermal conductivity material(2025-02-01); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Enhanced thermoelectric properties of bismuth telluride via Ultra-Low thermal conductivity BOSC compound addition(2024-12-01); ; This study aimed to enhance the thermoelectric properties of bismuth telluride by adding Bi<inf>4</inf>O<inf>4</inf>SeCl<inf>2</inf> (BOSC). Commercial N-type bismuth telluride was mixed with BOSC powder in varying concentrations. As the BOSC content increased, the carrier concentration also rose due to chlorine atoms acting as donor impurities. Despite this increase, the power factor values of the samples with BOSC additives did not significantly differ from those of the bare bismuth telluride sample. However, the total thermal conductivity decreased significantly with the addition of BOSC, reaching a minimum value of 0.54 W·m<sup>–1</sup>·K<sup>–1</sup> at 150 °C for the sample with 1 wt% BOSC. Notably, the ZT value for the sample with 1 wt% BOSC was about 0.86, which is four times higher than that of the bare bismuth telluride sample. Our findings demonstrate superior thermoelectric performance, indicating a more efficient modification of thermoelectric properties through the addition of BOSC to the bismuth telluride matrix. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Enhanced antimony telluride thermoelectric generators: From material synthesis to device applications(2025-12-01); ; This study investigates the effect of Bi₄O₄SeCl₂ (BOSC) addition (0–4 wt%) on the thermoelectric performance of p-type Bi₀.₅Sb₁.₅Te₃ synthesized via high-energy ball milling. XRD analysis revealed lattice incorporation at 1 wt% BOSC, while higher concentrations led to phase separation. The 1 wt% BOSC sample exhibited a significantly reduced total thermal conductivity of 0.28 W/m·K, compared to 0.46 W/m·K in the undoped sample, attributed to enhanced phonon scattering. Despite moderate decreases in electrical conductivity and Seebeck coefficient, a peak ZT of 1.02 at 50 °C was achieved—representing a ∼54 % improvement over the undoped material. Furthermore, a prototype thermoelectric module fabricated with BOSC-doped legs produced a power density of 17.6 mW/cm² under a 150 °C temperature gradient. These results demonstrate that BOSC is an effective additive for reducing thermal conductivity and enhancing overall thermoelectric performance, offering potential for energy harvesting applications at moderate temperatures. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Post-annealing effects on (00l) texture, Cl/Se ratio, and electrical and glass-like thermal transport in Bi₄O₄SeCl₂(2026-04-25); ; Naemchanthara, KittisakchaiBi₄O₄SeCl₂ is a heteroanionic layered material with intrinsically low lattice thermal conductivity and anisotropic charge transport. In this work, the effects of post-annealing temperature on the crystallographic texture, anion chemistry, defect evolution, and transport properties of Bi₄O₄SeCl₂ were systematically investigated. Polycrystalline Bi₄O₄SeCl₂, synthesized by solid-state reaction combined with high-energy ball milling, was post-annealed at 400–700 °C. X-ray diffraction and electron microscopy revealed that post-annealing eliminated the residual BiOCl precursor phase, enhanced the (00 l) preferred orientation, and promoted grain growth up to 600 °C, followed by partial texture degradation at 700 °C due to recrystallization. Energy-dispersive spectroscopy showed progressive Se and Cl volatilization during annealing, leading to an increased Cl/Se ratio. The carrier mobility and electrical conductivity reached maximum values at 600 °C, consistent with improved texture and layered-domain connectivity. Thermal transport remained lattice-dominated and only weakly temperature-dependent. The phonon mean free path, estimated using kinetic theory, was in the sub-nanometer range (∼0.25–0.57 nm), comparable to the interatomic spacing, indicating glass-like phonon transport. Representative HRTEM observations also revealed dislocation-related lattice defects and locally distorted regions, suggesting that vacancy disorder and local strain fields may provide additional phonon scattering. These results demonstrate that post-annealing optimizes electrical transport through phase purification, texture development, and defect-mediated carrier regulation, while the lattice thermal conductivity remains fundamentally limited by intrinsic glass-like phonon transport in Bi₄O₄SeCl₂. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Ultrathin AlN barrier coatings for enhancing surface chemical stability and suppressing electrochemical migration in immersion silver–finished printed circuit boards(2026-08-15); Immersion silver-finished printed circuit boards (PCB-ImAg) provide low contact resistance and excellent solderability, but their chemical instability in humid and sulfur-containing environments can compromise long-term reliability. In this study, ultrathin aluminum nitride (AlN) films (20–60 nm) were deposited on PCB-ImAg substrates by reactive DC magnetron sputtering as inorganic barrier layers. Their protective performance was evaluated by accelerated H<inf>2</inf>S exposure, long-term ambient air exposure, tape testing, electrical resistance measurements, electrochemical migration (ECM) testing under a 3 V bias at 30 °C and 80% RH, and surface characterization. Uncoated PCB-ImAg samples showed severe tarnishing, Ag<inf>2</inf>S formation, dendritic corrosion, and a marked increase in electrical resistance after both H<inf>2</inf>S and prolonged air exposure. In contrast, AlN-coated samples retained a cleaner surface, remained adherent after the tape test, and showed much smaller resistance changes. X-ray photoelectron spectroscopy detected sulfur-related chemical states only on the uncoated surfaces, indicating suppression of sulfide formation by the AlN layer. A 20 nm AlN coating was sufficient for anti-tarnish and ambient air stability, whereas coatings of 40 nm or greater were required for robust ECM suppression. These results demonstrate that ultrathin AlN films effectively improve the corrosion resistance and ECM reliability of PCB-ImAg surfaces. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Enhancing thermoelectric properties of Bi2Te3 film via CuI doping: Sputtering and solid iodination methods verified by ab initio calculation(2024-04-01);