Somdock, Nuttakrit

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Somdock, Nuttakrit
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nuttakrit.so@kmitl.ac.th

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    Item type:Publication,
    Effect of real working environment/formation of oxide phase on thermoelectric properties of flexible Sb2Te3 films
    (2019-09-01)
    Somdock, Nuttakrit
    ;
    Harnwunggmoung, Adul
    ;
    Sakulkalavek, Aparporn
    ;
    Sakdanuphab, Rachsak
    Flexible Sb<inf>2</inf>Te<inf>3</inf> thin films, for thermoelectric generator applications, were deposited by DC magnetron sputtering. As-deposited films were annealed in air to simulated a realistic operating environment. The oxidation behavior of the films was studied by monitoring their phase change on exposure to air at different temperatures between 50 and 300 °C for annealing times from 1 to 15 h. Oxidation of Sb and Te formed Sb<inf>2</inf>Te<inf>4</inf> and TeO<inf>2</inf> phases when annealing above 100 °C and Sb<inf>2</inf>Te<inf>3</inf> decomposed into oxide phases at an annealing temperature of 250 °C for 15 h. The thermoelectric performance decreased as the content of Sb<inf>2</inf>O<inf>4</inf> and TeO<inf>2</inf> phases increased. These findings show the limitations of Sb<inf>2</inf>Te<inf>3</inf> films operating in air without vacuum or a protective environment. We propose that the kinetic growth of oxide formation on the Sb<inf>2</inf>Te<inf>3</inf> thin films depend on chemical activation energy and oxygen diffusion through the oxide barrier by the variation of annealing temperature and annealing time, respectively.
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    Simultaneous stoichiometric composition and highly (00l) orientation of flexible Bi2Te3thin films via optimising the DC magnetron sputter-deposition process
    (2019-01-30)
    Somdock, Nuttakrit
    ;
    Kianwimol, Supasak
    ;
    Harnwunggmoung, Adul
    ;
    Sakulkalavek, Aparporn
    ;
    Sakdanuphab, Rachsak
    Simultaneous stoichiometric composition and highly (00l) orientation of flexible Bi<inf>2</inf>Te<inf>3</inf> thin films were investigated under the DC magnetron sputtering parameters. Stoichiometric Bi<inf>2</inf>Te<inf>3</inf> and highly (00l) orientation structure was obtained by sputtering conditions, preheat temperature at 350 °C, and working pressure of 1.8 × 10<sup>−3</sup> mbar. This designed structure of layered compact feature with stoichiometry provide the relatively high mobility. The maximum carrier mobility of 118 cm<sup>2</sup>/V was observed for highly (00l) film. The electrical conductivity of thin film has been greatly enhanced, to a maximum of about 14.90 × 10<sup>3</sup> S/cm at 50 °C. This value is higher than those of hot-pressed or spark plasma sintering n-type Bi<inf>2</inf>Te<inf>3</inf> bulk alloys. The maximum power factor of 12.5 × 10<sup>−3</sup> W/m.K<sup>2</sup> was obtained at 300 °C.