Somdock, Nuttakrit

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Somdock, Nuttakrit
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nuttakrit.so@kmitl.ac.th

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    Item type:Publication,
    Effect of real working environment/formation of oxide phase on thermoelectric properties of flexible Sb2Te3 films
    (2019-09-01)
    Somdock, Nuttakrit
    ;
    Harnwunggmoung, Adul
    ;
    Sakulkalavek, Aparporn
    ;
    Sakdanuphab, Rachsak
    Flexible Sb<inf>2</inf>Te<inf>3</inf> thin films, for thermoelectric generator applications, were deposited by DC magnetron sputtering. As-deposited films were annealed in air to simulated a realistic operating environment. The oxidation behavior of the films was studied by monitoring their phase change on exposure to air at different temperatures between 50 and 300 °C for annealing times from 1 to 15 h. Oxidation of Sb and Te formed Sb<inf>2</inf>Te<inf>4</inf> and TeO<inf>2</inf> phases when annealing above 100 °C and Sb<inf>2</inf>Te<inf>3</inf> decomposed into oxide phases at an annealing temperature of 250 °C for 15 h. The thermoelectric performance decreased as the content of Sb<inf>2</inf>O<inf>4</inf> and TeO<inf>2</inf> phases increased. These findings show the limitations of Sb<inf>2</inf>Te<inf>3</inf> films operating in air without vacuum or a protective environment. We propose that the kinetic growth of oxide formation on the Sb<inf>2</inf>Te<inf>3</inf> thin films depend on chemical activation energy and oxygen diffusion through the oxide barrier by the variation of annealing temperature and annealing time, respectively.
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    Enhancing thermoelectric properties of Bi2Te3 film via CuI doping: Sputtering and solid iodination methods verified by ab initio calculation
    (2024-04-01)
    Khumtong, Tanakorn
    ;
    Theekhasuk, Nattharika
    ;
    Somdock, Nuttakrit
    ;
    Pluengphon, Prayoonsak
    ;
    Inceesungvorn, Burapat
    We have introduced an innovative method for preparing CuI-doped Bi<inf>2</inf>Te<inf>3</inf> films for the first time, which was also validated through ab initio calculations. The chemical reaction between the Cu-Bi<inf>2</inf>Te<inf>3</inf> film and iodine was conducted using the solid iodination method at room temperature. The results from X-ray diffraction and energy-dispersive spectrometry suggest that the sputtering process, followed by the solid iodination method, holds promise for synthesizing CuI-doped Bi<inf>2</inf>Te<inf>3</inf> films. Additionally, appropriately doping Bi<inf>2</inf>Te<inf>3</inf> with CuI enhances the (00l) crystal orientation, increases carrier concentration and mobility, resulting in improved electrical conductivity. Furthermore, our calculation results align with our experimental findings. An excess of substitutional CuI dopant tends to generate secondary phases, leading to alterations in the intrinsic conductivity and a reduction in the thermoelectric properties of Bi<inf>2</inf>Te<inf>3</inf>. Leveraging the enhanced electrical transport properties achieved through CuI doping, the maximum power factor of the (CuI)<inf>0.2</inf>Bi<inf>2</inf>Te<inf>2.9</inf> film reaches approximately 2.40 × 10<sup>−3</sup> W/mK<sup>2</sup> at 423 K, representing a 66 % enhancement compared to that of the Bi<inf>2</inf>Te<inf>2.9</inf> film, which has a power factor of 1.44 × 10<sup>−3</sup> W/mK<sup>2</sup>.