Sakdanuphab, Rachsak
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Preferred name
Sakdanuphab, Rachsak
Alternative Name
Sakdanuphab, R.
Sakdanuphab, Rachasak
Main Affiliation
Email
rachsak.sa@kmitl.ac.th
6 results
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Item type:Publication, Effect of annealing temperature on thermoelectric properties of bismuth telluride thick film deposited by DC magnetron sputtering(2020-07-15); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Simultaneous O2 plasma and thermal treatment for improved surface conductivity of Cu-Doped SnO2 films(2019-08-01); ; - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Figure of merit improvement of delafossite CuAlO2 with the addition of Fe and graphene(2019-11-01); This study investigated the synthesis of delafossite CuAlO<inf>2</inf> with Fe and graphene through a solid-state reaction method. The results of X-ray diffractometry showed that graphene was insoluble in delafossite CuAlO<inf>2</inf> while Fe was substituted into Al sites, expanding the d-spacing. From X-ray photoelectron spectroscopy, graphene induced excess oxygen in the delafossite CuAlO<inf>2</inf> structure via C–O–Cu bonds and improved the electrical conductivity. In addition, the thermal conductivity was reduced due to generation of point defects, phonon-phonon Umklapp and carrier-phonon scattering. The addition of Fe and graphene in CuAlO<inf>2</inf> shows an improvement of ZT to 0.0114 at 573 K. This is attributable to its increase in charge carrier density, as well as a decrease in thermal conductivity. This study highlights the benefits of combining Fe and graphene in delafossite CuAlO<inf>2</inf> as a prospective process for attaining a high figure of merit thermoelectric materials. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Optimization of the nitrogen content for room temperature rapid synthesis of CuI thin films via liquid iodination method using Cu3N film as precursor(2020-06-01); ; In this work, we demonstrate that CuI films can be obtained by the liquid–phase iodination method with the chemical reaction time only being 1 min between Cu<inf>3</inf>N and aqueous iodine solution at room temperature. This is a simple and eco-friendly method with high transparency and low resistivity. The Cu<inf>3</inf>N precursors were prepared by reactive DC magnetron sputtering using different N<inf>2</inf> partial pressures. The effect of nitrogen content of precursor (Cu<inf>3</inf>N) on the structural, electrical, and optical properties of CuI thin films was discussed. Electronegativity property was used to explain the growth mechanism of CuI films prepared by different nitrogen content in the precursor. By growing the CuI films with a N<inf>2</inf>:Ar gas ratio of 5:2, the average transmittance achieved was 75% in the visible spectral range, and the lowest resistivity achieved was 3.67 × 10<sup>–2</sup> Ω cm. These results suggest that the liquid iodination method using Cu<inf>3</inf>N film as precursor (N<inf>2</inf>:Ar gas ratio of 5:2) was suitable for preparing high-quality CuI films for application in transparent electronics. - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Enhanced carrier concentration of Fe doped delafossite CuAlO2 by double-effect: Divalent metal ions doping and excess oxygen(2018-12-15); - Some of the metrics are blocked by yourconsent settings
Item type:Publication, Room-temperature rapid synthesis of CuI thin films via liquid iodination method(2020-05-01);