Sakdanuphab, Rachsak

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Sakdanuphab, Rachsak
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Sakdanuphab, R.
Sakdanuphab, Rachasak
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rachsak.sa@kmitl.ac.th

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    Item type:Publication,
    Advances in flexible telluride thin-film thermoelectric generators: Deposition, performance, and module fabrication
    (2026-04-01)
    Theekhasuk, Nattharika
    ;
    Sakdanuphab, Rachsak
    ;
    Kianwimol, Supasak
    ;
    Khumtong, Thanakorn
    ;
    Toan, Nguyen Van
    Flexible thermoelectric generators (TEGs) are gaining increasing attention for wearable and skin-attachable electronics due to their ability to harvest low-grade heat from the human body. In this work, p-type Sb<inf>2</inf>Te<inf>3</inf> and n-type Bi<inf>2</inf>Te<inf>3</inf> thin films were deposited by direct current (DC) magnetron sputtering, and the effects of post-deposition annealing on their structural, electrical, and thermal transport properties were systematically evaluated. X-ray diffraction revealed that n-Bi<inf>2</inf>Te<inf>3</inf> exhibited higher crystallinity than p-Sb<inf>2</inf>Te<inf>3</inf>, attributed to its lower formation energy. Annealing at 250 °C markedly enhanced the electrical conductivity of both films, with p-Sb<inf>2</inf>Te<inf>3</inf> showing a larger improvement due to concurrent increases in carrier concentration and mobility driven by Te volatilization and the formation of acceptor-type vacancies and antisite defects. In contrast, n-Bi<inf>2</inf>Te<inf>3</inf> exhibited a slight reduction in carrier concentration as a result of compensating donor defects. Consequently, maximum ZT values of approximately 0.5 for p-Sb<inf>2</inf>Te<inf>3</inf> and 0.25 for n-Bi<inf>2</inf>Te<inf>3</inf> were achieved at 513 K. Notably, the compatibility factor (S) values of both films differed by less than a factor of two, indicating favorable thermodynamic pairing for p–n module assembly. A flexible TEG module with 12 thermocouples was subsequently fabricated and delivered an output power of 0.65 μW at ΔT < 25 K, demonstrating promising potential for scalable self-powered wearable electronics.
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    Effect of annealing temperature on thermoelectric properties of bismuth telluride thick film deposited by DC magnetron sputtering
    (2020-07-15)
    Kianwimol, Supasak
    ;
    Sakdanuphab, Rachsak
    ;
    Chanlek, Narong
    ;
    Harnwunggmoung, Adul
    ;
    Sakulkalavek, Aparporn
    We report the thermoelectric properties of thick bismuth-telluride (Bi<inf>2</inf>Te<inf>3</inf>) films deposited on polyimide substrates by DC magnetron sputtering and annealed at various temperatures (150–350 °C). The influence of annealing temperature on the microstructure and electronic structure of thick Bi<inf>2</inf>Te<inf>3</inf> films is discussed. In this work, the annealed film at 250 °C has the best thermoelectric property due to highest electrical conductivity and Seebeck coefficient. The main effect of annealing temperature was really helpful to improve crystalline structure and enhance carrier mobility, whereas the carrier concentration was reduced due to the volatile of tellurium atom during annealing. Chemical states of bound and unbound atoms (Bi, Bi<sup>3+</sup>, Te, and Te<sup>2‐</sup>) on the surface play an important role in electrical properties. The exceed temperature caused the micro-crack formation and affect carrier transport by the scattering. The power factor of Bi<inf>2</inf>Te<inf>3</inf> deposited by DC magnetron sputtering and annealed at 250 °C is comparable to the power factors of thick Bi<inf>2</inf>Te<inf>3</inf> film deposited by various deposition techniques. The output power of single-leg, thick, thermoelectric Bi<inf>2</inf>Te<inf>3</inf> film annealed at 250 °C as a function temperature generated a power of 0.98 μW at a temperature difference of 50 °C.