Sakulkalavek, Aparporn

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Sakulkalavek, Aparporn
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Sakulkalavek, A.
Sakulkalavek, Aparpron
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Email
aparporn.sa@kmitl.ac.th

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    High-performance flexible thermoelectric generator based on silicone rubber and cover with graphite sheet
    (2024-01-05)
    Gobpant, Jakrit
    ;
    Klongratog, Bhanupol
    ;
    Rudradawong, Chalermpol
    ;
    Sakdanuphab, Rachsak
    ;
    Junlabhut, Prasopporn
    Harvesting thermal energy through a flexible thermoelectric generator (FTEG) offers an excellent micro-power solution for energizing node sensors in the realm of Internet of Things (IoT) and wearable electronics. Nonetheless, current FTEG suffer from drawbacks including low efficiency, significant thermal resistance, and complex manufacturing procedures. In this study, a high-performance FTEG using silicone rubber was designed and fabricated using a straightforward process. The finite-element method was used to optimize the copper electrode thickness, and the bendable substrate layers with various thermal conductivity were studied for the first time. The copper electrode thickness of 0.1 mm was selected because it offers high flexibility and bendability while still providing a relatively high-power output. The 5 × 5 cm<sup>2</sup> FTEG device was fabricated and covered with a bendable substrate. Silicon rubber (0.08 Wm<sup>−1</sup>K<sup>−1</sup>), silicon rubber added 5% graphene (0.14 Wm<sup>−1</sup>K<sup>−1</sup>), and graphite sheets (15 Wm<sup>−1</sup>K<sup>−1</sup>) were used as bendable substrates. The FTEG cover with graphite sheets has a maximum output voltage of 1.1 V under a temperature difference (ΔT) at 65 °C. Its maximum output power is 162.4 mW, corresponding to a power density of 6499.1 µW/cm<sup>2</sup> under the same above ΔT. The experimental findings indicated that integrating a bendable substrate with high thermal conductivity and electrical insulation properties enhances the performance of the FTEG.
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    Thickness Dependence of Thermoelectric Properties and Maximum Output Power of Single Planar Sb2Te3 Films
    (2022-12-01)
    Junlabhut, Prasopporn
    ;
    Nuthongkum, Pilaipon
    ;
    Harnwunggmoung, Adul
    ;
    Limsuwan, Pichet
    ;
    Hatayothai, Chanon
    P-type Sb<inf>2</inf>Te<inf>3</inf> films with different thicknesses were deposited on polyimide substrates via heat treatment-assisted DC magnetron sputtering. The correlations between the thickness variance and the structure, dislocation density, surface morphology, thermoelectric properties and output power are investigated. As a result, it is clear that the film thickness and the heat treatment process during growth are related to the diffusion of deposited atoms on the substrate surface, leading to imperfection defects inside the films. The imperfections inside the films are affected by their properties. This work also presents the thermoelectric efficiency of a planar single leg of the deposited films with various thicknesses. The maximum power factor is 2.73 mW/mK<sup>2</sup> obtained with a film thickness of 9.0 µm and an applied temperature of 100 °C. Planar Sb<inf>2</inf>Te<inf>3</inf> produced a maximum output power of 0.032 µW for a temperature difference of 58 K.
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    Enhancing the thermoelectric properties of sputtered Sb2Te3 thick films via post-annealing treatment
    (2020-04-15)
    Junlabhut, Prasopporn
    ;
    Nuthongkum, Pilaipon
    ;
    Sakulkalavek, Aparporn
    ;
    Harnwunggmoung, Adul
    ;
    Limsuwan, Pichet
    Sb<inf>2</inf>Te<inf>3</inf> films of more than 10 μm in thickness were deposited on flexible polyimide substrates by heat treatment-assisted DC magnetron sputtering. The post-annealing parameters including the temperature (150–350 °C) and time (15–60 min) were varied to investigate the microstructure, chemical composition, porosity and thermoelectric properties of the thick films. X-ray diffraction showed that both the as-deposited and post-annealed films were polycrystalline with significant preferential growth along the (015) plane. The films showed slightly off-stoichiometric compositions after post-annealing treatment. Increasing the annealing temperature and annealing time led to an increase in crystalline size and a decrease in porosity of the thick films. This was related to grain growth, agglomeration and surface improvement. The electrical transport and thermoelectric properties including carrier concentration, carrier mobility, electrical conductivity and Seebeck coefficient were investigated using Hall effect measurements and a ZEM-3 apparatus. A maximum power factor of 1.7 mW/K<sup>2</sup>m was obtained following annealing at 350 °C for 30 min.
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    Influence of Sputtering Power Density on the Thermoelectric and Mechanical Properties of Flexible Thermoelectric Antimony Telluride Films Deposited by DC Magnetron Sputtering
    (2020-05-01)
    Junlabhut, Prasopporn
    ;
    Nuthongkum, Pilaipon
    ;
    Sakdanuphab, Rachsak
    ;
    Harnwunggmoung, Adul
    ;
    Sakulkalavek, Aparporn
    Antimony telluride (Sb<inf>2</inf>Te<inf>3</inf>) films were deposited on flexible polyimide substrates by DC magnetron sputtering technique using a 99.9% alloy Sb<inf>2</inf>Te<inf>3</inf> target. We measured structural, electrical, thermoelectric and mechanical properties with sputtering power density in the range 30–50 W. X-ray diffraction confirmed that all Sb<inf>2</inf>Te<inf>3</inf> films have high crystallinity with a significant preferential growth along the (015) plane. Surface morphologies were verified by scanning electron microscope: deposited film grain size increased with sputtering power density. The elemental composition was determined by energy dispersive x-ray spectroscopy. Electrical transport properties, carrier concentration, was measured by Hall effect measurement at room temperature. Electrical conductivity and Seebeck coefficient were simultaneously measured by a DC four-terminal method (ZEM-3). The power factor was strongly dominated by electrical conductivity, leading to a maximum of 1.95 mW/K<sup>2</sup>m with sputtering power 45 W at 300°C. The wettability test, based on the contact angle, evaluated surface energy and hydrophilicity. Nanoindentation was measured on a NHT<sup>2</sup> CSM Instrument with diamond Berkovich indenter (B-P 31) at room temperature. The hardness and elastic modulus of deposited Sb<inf>2</inf>Te<inf>3</inf> films increased with the power density.
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