Nukeaw, Jiti

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High sensitive nanocrystal titanium nitride EG-FET pH sensor
(2013-10-29)
Rayanasukha, Yossawat
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Porntheeraphat, Supanit
;
Bunjongpru, Win
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Khemasiri, Narathon
;
Pankiew, Apirak
Solid state pH-sensor device with high efficiency has successfully prepared by using TiN thin film as sensing membrane of extended gate field effect transistor (EG-FET) device. This research has described the physical properties and sensing characteristics of TiN membrane thin film which deposited on SiO<inf>2</inf>/Si substrate through reactive D.C. magnetron sputtering system. Thenanocrytal-TiNwith anatasestructure depended on substrate heating conditions was revealed from glancing angle x-ray diffraction. The I<inf>DS</inf>-V<inf>GS</inf> measurement in the standard buffer solutions showed that the sensitivity of fabricated TiN-EGFET pH deviceis 59.82mV/pH. © (2013) Trans Tech Publications, Switzerland.
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Observations of the initial stages on reactive gas-timing sputtered TaO thin films by dynamic in situ spectroscopic ellipsometery
(2019-06-01)
Chittinan, D.
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Buranasiri, P.
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Lertvanithphol, T.
;
Eiamchai, P.
;
Patthanasettakul, V.
Dynamic in-situ spectroscopic ellipsometry (iSE) was employed to investigate the growth mechanism of the tantalum oxide (TaO) film on silicon wafer substrate deposited by reactive gas-timing RF magnetron sputtering compared with conventional reactive sputtering. The effect of reactive gas timing parameter on physical structure and optical property were analyzed by both the continuous and island film growth model with Tauc-Lorentz optical model. The variation of refractive index, film thickness and void volume fraction were obtained from dynamic fits of iSE data indicated that the growth process of the amorphous TaO thin films was divided into two regimes: the nucleation stage and continuous-layer stage. These stages were observed during deposition although the initial film growth stage corresponds to the island film growth model. The study demonstrates that sputtered TaO by the RGT technique at the O<inf>2</inf> on-off gas timing has played a crucial factor in improving the formation of nucleation stage and that the deposited TaO thin films were high deposition rate with high refractive index. The complementary field emission scanning electron microscope (FE-SEM) and transmission electron microscope (TEM) showed a good agreement with the film thickness and morphology obtained from dynamic iSE measurement. The real-time monitoring of iSE offers important evidences to understand the growth mechanism of reactive gas-timing technique.
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Tailoring Properties of Hafnium Nitride Thin Film via Reactive Gas-Timing RF Magnetron Sputtering for Surface Enhanced-Raman Scattering Substrates
(2022-01-01)
Sucheewa, Nguentra
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Wongwiriyapan, Winadda
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Klamchuen, Annop
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Obata, Michiko
;
Fujishige, Masatsugu
This study successfully demonstrated the tailoring properties of hafnium nitride (HfN) thin films via reactive gas-timing (RGT) RF magnetron sputtering for surface-enhanced Raman spectroscopy (SERS) substrate applications. The optimal RGT sputtering condition was investigated by varying the duration time of the argon and nitrogen gas sequence. The RGT technique formed thin films with a grain size of approximately 15 nm. Additionally, the atomic ratios of nitrogen and hafnium can be controlled between 0.24 and 0.28, which is greater than the conventional technique, resulting in a high absorbance in the long wavelength region. Moreover, the HfN thin film exhibited a high Raman signal intensity with an EF of 8.5 × 104 to methylene blue molecules and was capable of being reused five times. A superior performance of HfN as a SERS substrate can be attributed to its tailored grain size and chemical composition, which results in an increase in the hot spot effect. These results demonstrate that the RGT technique is a viable method for fabricating HfN thin films with controlled properties at room temperature, which makes them an attractive material for SERS and other plasmonic applications.
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Spectroscopic study on amorphous tantalum oxynitride thin films prepared by reactive gas-timing RF magnetron sputtering
(2019-10-30)
Lertvanithphol, T.
;
Rakreungdet, W.
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Chananonnawathorn, C.
;
Eiamchai, P.
;
Limwichean, S.
The amorphous tantalum oxynitride (TaO<inf>x</inf>N<inf>y</inf>) thin films were prepared on silicon (100) substrates by magnetron sputtering system with different techniques of conventional reactive sputtering and reactive gas-timing (RGT). The films were studied via spectroscopic ellipsometry (SE) measured in the range of 0.75–5.0 eV with 0.025 eV interval at 70° incident angle, and the optical model based on Tauc-Lorentz function was constructed to extract the properties of the films. The SE results indicated that all prepared films were grown homogeneously and show different optical properties upon their deposition conditions and techniques. The optical properties of film prepared by conventional reactive sputtering were close to the tantalum oxide film (TaO). The refractive index and optical band gap (E<inf>g</inf>) of RGT samples changed with the oxygen timing and correlated with the change of oxygen and nitrogen concentration of the films. In addition, the morphologies, crystallinities, atomic concentrations and distributions of nitrogen atoms in the films analyzed by field-emission scanning electron microscopy, glazing-incident X-ray diffraction, X-ray photoelectron spectroscopy and X-ray absorption spectroscopy are also discussed.

Nukeaw, Jiti

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