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Improving the forward current of P-N diode using soft X-ray annealing method
Author(s)
Ueamanapong, Surada
Srithanachai, Itsara
Suwanchatree, Ai Lada
Niemcharoen, Surasak
Klunngien, Nipapan
Poyai, Amporn
Date Issued
December 31, 2013
Type
Conference Paper
Abstract
This paper presents a new result to improve the performance of P-N diode. The P-N diodes are fabrication using CMOS technology at TMEC. Electrical characteristics of P-N junction diode can be analyzed by current-voltage (I-V) measurement. This paper investigates X-ray irradiation by its electrical characteristics of difference X-ray exposure time. The X-ray energy use to expose 55 and 70 keV various time in the range 5-205 sec of exposure. After X-ray irradiation the forward current are increased about 3-4 orders. The series resistance and recombination lifetime are main factor for describe the change of forward current. Series resistance after X-ray irradiation with 55 and 70 keV are decreased from 10 k to 5, which show that the device performance of diode are increased after X-ray irradiation. While the recombination lifetime are decreased from 55 to 48 μsec and 52 to 45 μsec at 55 and 70 keV, respectively. From the results show that soft X-ray annealing is very important to semiconductor industry. © 2013 IEEE.
Citation
13th International Symposium on Communications and Information Technologies Communication and Information Technology for New Life Style Beyond the Cloud Iscit 2013, 330-333, 2013