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Power device impact using pt-doped on i-v characteristics
Author(s)
Sangwaranatee, Narong
Srithanachai, Itsara
Yupapin, Preecha P.
Date Issued
June 1, 2016
Type
Article
Abstract
We investigate the influence of Pt-doped in the power device, where the power device has been fabricated by using CMOS technology. Pt has high diffusion coefficient in the semiconductor material and Pt atom that can be used to reduce the device switching time. On the other hand, it may induce defects in device mechanism. The results obtained show that the Pt can penetrate into the silicon structure of 3,700A (before RTA process) by using the ion implantation 120keV. The Pt-doped device has shown the higher forward current of order 1. The goal of this experiment is to investigate the effect of Pt-doping on electrical characteristics of the power device.
Citation
Far East Journal of Electronics and Communications, 16(2), 451-458, 2016