Temperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk chemically reduced graphene oxide with bipolar charge carrier materials

Maneesai, Keerati; Silakaew, Kanyapak; Khammahong, Sunisar; Phrompet, Chaiwat; Sriwong, Chaval; Thanachayanont, Chanchana; Ruttanapun, Chesta

doi:10.1063/5.0142476

Temperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk chemically reduced graphene oxide with bipolar charge carrier materials

Author(s)

Maneesai, Keerati

Silakaew, Kanyapak

Khammahong, Sunisar

Phrompet, Chaiwat

Sriwong, Chaval

Thanachayanont, Chanchana

Ruttanapun, Chesta

Date Issued

March 1, 2023

Type

Article

DOI

10.1063/5.0142476

Abstract

The temperature-dependent electrical transport, Hall effect, and Seebeck properties of bulk-reduced graphene oxide (rGO) prepared by a chemical reduction process were investigated in a temperature range of 310-475 K. The bulk rGO contained bipolar charge carriers with p-type to n-type switching at a temperature of 420 K. The materials illustrated a p-type characteristic in the temperature range of 310-420 K and n-type characteristic in the temperature range of 420-475 K. The charge transport mechanism was that of the graphene-derived 2D material in the p-type regime and governed by polaronic charge carriers.

Citation

Aip Advances, 13(3), 2023