Bi-stable switching behaviors of ITO/EVA:ZnO NPs/ITO transparent memory devices fabricated using a thermal roll lamination technique

Onlaor, Korakot; Thiwawong, Thutiyaporn; Tunhoo, Benchapol

doi:10.1016/j.orgel.2016.01.019

Bi-stable switching behaviors of ITO/EVA:ZnO NPs/ITO transparent memory devices fabricated using a thermal roll lamination technique

Author(s)

Onlaor, Korakot

Thiwawong, Thutiyaporn

Tunhoo, Benchapol

Date Issued

April 1, 2016

Type

Article

DOI

10.1016/j.orgel.2016.01.019

Abstract

This research reported the transparent non-volatile write-once-read-many-times (WORM) memory behaviors of memory devices based on zinc oxide nanoparticles (ZnO NPs) embedded in an insulating poly(ethylene-co-vinyl acetate) (EVA), sandwiched between two ITO-coated flexible polyethylene naphthalate (PEN) substrates. The memory devices were fabricated employing a thermal roll lamination technique with the laminated-structure of PEN/ITO/EVA:ZnO NPs/ITO/PEN. The average transmittance of the laminated memory device was over 70% for an optical visible range of 400-800 nm. The maximum ON/OFF current ratio for the memory device was about 10³. In addition, a reliability study for continuous read operations in a long time memory device is presented. The conductance switching mechanisms of the laminated memory device were analyzed using theoretical models on the basis of the experimental data.

Citation

Organic Electronics, 31, 19-24, 2016

Subjects

EVA

Lamination

Memory

Nanoparticles

WORM

ZnO