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Diamond microelectrodes for Amperometric oxygen sensor

Author(s)
Cheirsirikul, Somsak
Mongkolkiartichai, Tosnus
Date Issued
January 1, 2014
Type
Conference Paper
DOI
10.4028/www.scientific.net/AMR.911.276
Abstract
This report Studied and development of diamond microelectrodes for Amperometric oxygen sensor. Boron-doped diamond film was Synthesized on a Si substrate by Hot-Filament CVD with the optimization Condition for film thickness 5 μm. This diamond film has the active area of electrode Control dimensions by technique uses SiO2 be a mask Protecting diamond film formation. Four-point probe in additional and Hall Effect technique were used to measure the resistivity, and to measure carriers concentrations of the respectively. Study electrochemistry characteristics of diamond electrodes using Cyclic Voltammetry method. These B/C 10,000 PPM Boron doped diamond electrodes are used as working electrodes of Amperometric oxygen sensor for various of this gas levels detection. These electrodes are packaged with 0.1M KCl solution. The experiment show that current density of the diamond microelectrodes with 100 μm spacing was greater than the current density of the diamond microelectrodes with 40 μm spacing and the planar diamond electrode. © (2014) Trans Tech Publications, Switzerland.
Citation
Advanced Materials Research, 911, 276-280, 2014
Subjects

Amperometric oxygen s...

Diamond characterizat...

Diamond microelectrod...

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