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The new design for magnetoresistance effect on hall plate structure
Author(s)
Date Issued
October 2, 2012
Type
Conference Paper
Abstract
This paper presents the new design which contributes to magnetoresistance effect on Hall plate by compared with series resistance structure by Sentaurus TCAD program. A new design creates zero Hall voltage area which the carriers move and deflect freely. The Hall plate structure is n-type silicon with 400 μm length, 100 μm width and 1 μm thickness. Both designs have percentage of magnetoresistance effect about 20% at doping concentration 2×10 15cm -3, temperature 300K at magnetic field 3 Tesla. A new design on Hall plate structure is easier than the classical series resistance and has no effect of metal space which is in series resistance structure. © 2012 IEEE.
Citation
2012 9th International Conference on Electrical Engineering Electronics Computer Telecommunications and Information Technology Ecti Con 2012, 2012