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Optoelectronic properties of Cu1-xPtxFeO2 (0 ≤ x ≤ 0.05) delafossite for p-type transparent conducting oxide
Author(s)
Date Issued
January 1, 2012
Type
Article
Abstract
The samples of Cu1-xPtxFeO2 (0 ≤ x ≤ 0.05) delafossite have been synthesized by solid-state reaction method to investigate their optical and electrical properties. The properties of electrical resistivity and Seebeck coefficient were measured in the high temperature ranging from 300 to 960 K, and the Hall effect and the optical properties were measured at room temperature. The obtained results of Seebeck showed the samples are p-type conductor. The optical properties at room temperature exhibited the samples are transparent visible light material with optical direct gap 3.45 eV. The low electrical resistivity, hole mobility and carrier density at room temperature displayed value ranging from 0.29 to 0.08 Ω cm, 1.8 to 8.6 cm2/V s and 1.56 × 1018 to 4.04 × 1019 cm-3, respectively. The temperature range for transparent visible light is below 820 K because the direct energy gap contains value above 3.1 eV. Consequently, the Cu1-xPt xFeO2 delafossite enhance performance for materials of p-type transparent conducting oxide (TCO) with low electrical resistivity. © 2011 Elsevier B.V. All rights reserved.
Citation
Current Applied Physics, 12(1), 166-170, 2012