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Generalization of ramo’s theorem and its application to semiconducting materials
Author(s)
Sato, Kazunori
Takahashi, Miki
Takano, Hiroaki
Hashimoto, Hajime
Niikura, Yuichiro
Matsumoto, Teru
Rutchanaphit, Phophon
Date Issued
January 1, 1995
Type
Article
Abstract
Ramo’s theorem is generalized for the current statically induced in neighboring conductors by a specified movement of a charge carrier to include the higher frequency domain. As an example of application of the generalized theory, the current associated with carriers generated in a rectangular semiconducting material is computed.When taking the velocity difference between electrons and holes into account, the current normalized at low frequencies due to spatially uniform generation of carrier pairs in an intrinsic semiconductor is formulated as follows:I(ω) — Σm=1, k (n/ωT)2[(1 +jωT/n) exp (— jωT/n) — l], where k(> 1) is the ratio of the electron velocity to the hole velocity, ω is the angular frequency, and T is the transit time for a hole traversing through the device. © 1995 The Japan Society of Applied Physics.
Citation
Japanese Journal of Applied Physics, 34(4R), 2057-2061, 1995